CRG40T75AK5SD-Z CR Micro 750V 40A IGBT TO-247
CRG40T75AK5SD-Z CR Micro 750V 40A IGBT TO-247

CRG40T75AK5SD-Z CR Micro 750V 40A IGBT TO-247

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pCRG40T75AK5SD-Z CR Micro 750V 40A IGBT TO-247 — VCE(sat) 1.45 V, Eoff 1.32 mJ./p
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    At a Glance
    • 750 V / 40 A continuous collector current, TO-247
    • VCE(sat) 1.45 V
    • Eoff 1.32 mJ per turn-off
    • Trench FS Ⅴ technology

    The CR Micro CRG40T75AK5SD-Z is a 750 V 40 A IGBT in a TO-247 package. Its saturation voltage is 1.45 V; turn-off loss is 1.32 mJ per pulse; the anti-parallel diode drops 1.65 V. The die is built on Trench FS Ⅴ technology.

    Key Specifications

    Collector-Emitter Voltage (VCES)750 V
    Continuous Collector Current (IC)40 A
    Collector-Emitter Saturation (VCE(sat))1.45 V
    Turn-off Loss (Eoff)1.32 mJ
    Diode Forward Voltage (VF)1.65 V
    TechnologyTrench FS Ⅴ
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVCESICVCE(sat)EoffVFTechnologyPackage
    CRG40T75AK5SD-Z750V40A1.45V1.321.65VTrench FS ⅤTO-247
    CRG40T75AK7HDZ750V40A1.41V0.671.9VTrench FS ⅦTO-247
    CRG75T75AK5SD-Z750V75A1.45V2.491.83VTrench FS ⅤTO-247
    CRG75T75AK7HDZ750V75A1.45V1.421.82VTrench FS ⅦTO-247
    CRG100T75AK7HDZ750V100A1.45V2.32VTrench FS ⅦTO-247

    5 part numbers share the same 750 / TO-247 rating — sorted by current.

    Process Technology

    Trench FS Ⅴ refers to a trench-gate field-stop structure. Field-stop layers let the wafer be thinned while keeping the blocking voltage, which cuts both saturation voltage and turn-off loss. The roman numeral is the generation: later generations trade conduction loss for switching speed.

    Applications

    High-voltage offline supplies, active clamp topologies, and single-stage PFC.

    Selection Notes

    • VCE(sat) is quoted at a specific collector current and gate voltage. Re-check the datasheet curve at your actual operating current and junction temperature.
    • Eoff trades directly against VCE(sat). Faster technology generations give lower Eoff at equal saturation, which is why a newer generation can run at a higher switching frequency.
    • Check the short-circuit withstand time before using the part in a drive with a hard fault path.
    • Confirm whether the anti-parallel diode is co-packaged or separate — the VF figure above refers to the internal diode where one is present.

    Common Questions

    What is the blocking voltage of the CRG40T75AK5SD-Z?

    VCES is 750 V, with a continuous collector current of 40 A.

    What is the saturation voltage of the CRG40T75AK5SD-Z?

    VCE(sat) is 1.45 V at the rated current and gate voltage stated in the datasheet.

    How much switching loss does the CRG40T75AK5SD-Z have?

    Turn-off loss Eoff is 1.32 mJ per pulse under the test conditions in the datasheet. Switching loss scales with bus voltage and current, so recalculate for your operating point.

    What technology does the CRG40T75AK5SD-Z use?

    Trench FS Ⅴ. Field-stop trench structures raise the electric field in the drift region while keeping the wafer thin, which lowers both VCE(sat) and Eoff against a planar IGBT.

    What package does the CRG40T75AK5SD-Z come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 5 part numbers in this rating group?

    All 5 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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