CRG75T75AQF5SDZ CR Micro 750V 75A IGBT TO-247-4
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- 750 V / 75 A continuous collector current, TO-247-4
- VCE(sat) 1.45 V
- Eoff 2.61 mJ per turn-off
- Trench FS Ⅴ technology
The CR Micro CRG75T75AQF5SDZ is a 750 V 75 A IGBT in a TO-247-4 package. Its saturation voltage is 1.45 V; turn-off loss is 2.61 mJ per pulse; the anti-parallel diode drops 2 V. The die is built on Trench FS Ⅴ technology.
Key Specifications
| Collector-Emitter Voltage (VCES) | 750 V |
| Continuous Collector Current (IC) | 75 A |
| Collector-Emitter Saturation (VCE(sat)) | 1.45 V |
| Turn-off Loss (Eoff) | 2.61 mJ |
| Diode Forward Voltage (VF) | 2 V |
| Technology | Trench FS Ⅴ |
| Package | TO-247-4 |
Process Technology
Trench FS Ⅴ refers to a trench-gate field-stop structure. Field-stop layers let the wafer be thinned while keeping the blocking voltage, which cuts both saturation voltage and turn-off loss. The roman numeral is the generation: later generations trade conduction loss for switching speed.
Applications
High-voltage offline supplies, active clamp topologies, and single-stage PFC.
Selection Notes
- VCE(sat) is quoted at a specific collector current and gate voltage. Re-check the datasheet curve at your actual operating current and junction temperature.
- Eoff trades directly against VCE(sat). Faster technology generations give lower Eoff at equal saturation, which is why a newer generation can run at a higher switching frequency.
- Check the short-circuit withstand time before using the part in a drive with a hard fault path.
- Confirm whether the anti-parallel diode is co-packaged or separate — the VF figure above refers to the internal diode where one is present.
Common Questions
What is the blocking voltage of the CRG75T75AQF5SDZ?
VCES is 750 V, with a continuous collector current of 75 A.
What is the saturation voltage of the CRG75T75AQF5SDZ?
VCE(sat) is 1.45 V at the rated current and gate voltage stated in the datasheet.
How much switching loss does the CRG75T75AQF5SDZ have?
Turn-off loss Eoff is 2.61 mJ per pulse under the test conditions in the datasheet. Switching loss scales with bus voltage and current, so recalculate for your operating point.
What technology does the CRG75T75AQF5SDZ use?
Trench FS Ⅴ. Field-stop trench structures raise the electric field in the drift region while keeping the wafer thin, which lowers both VCE(sat) and Eoff against a planar IGBT.
What package does the CRG75T75AQF5SDZ come in?
TO-247-4. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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