CRJD380N25T4 CR Micro 250V 5A N-Channel MOSFET TO-252
CRJD380N25T4 CR Micro 250V 5A N-Channel MOSFET TO-252

CRJD380N25T4 CR Micro 250V 5A N-Channel MOSFET TO-252

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pCRJD380N25T4 CR Micro 250V 5A N-Channel MOSFET TO-252 — Rds(on) 300 mΩ typ, Qg 5.2 nC./p
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    At a Glance
    • 250 V / 5 A continuous drain current, TO-252 package
    • Rds(on) 300 mΩ typ, 380 mΩ max at VGS = 10 V
    • Qg 5.2 nC and Ciss 145 pF
    • N-channel, Super Junction process

    The CR Micro CRJD380N25T4 is a 250 V 5 A N-channel MOSFET in a TO-252 package, built on the Super Junction process. On-resistance is 300 mΩ typical and 380 mΩ maximum at a 10 V gate drive; gate charge is 5.2 nC with 145 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)250 V
    Continuous Drain Current (ID)5 A
    Rds(on) @ VGS = 10 V, typ.300 mΩ
    Rds(on) @ VGS = 10 V, max.380 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)5.2 nC
    Input Capacitance (Ciss)145 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-252

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS14N25A4R250V14A20025022.71080TO-252
    CRJD380N25T4250V5A3003805.2145TO-252
    CS8N25A4R250V8A36047012.8557TO-252
    CS8R25A4R250V8A45060012584TO-252

    4 part numbers share the same 250 / TO-252 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJD380N25T4 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 250 V.

    Can the CRJD380N25T4 be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJD380N25T4?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJD380N25T4 need?

    Qg is 5.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJD380N25T4 come in?

    TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 4 part numbers in this rating group?

    All 4 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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