CRJD600N70G2M CR Micro 700V 7A N-Channel MOSFET TO-252
CRJD600N70G2M CR Micro 700V 7A N-Channel MOSFET TO-252

CRJD600N70G2M CR Micro 700V 7A N-Channel MOSFET TO-252

Share
pCRJD600N70G2M CR Micro 700V 7A N-Channel MOSFET TO-252 — Rds(on) 510 mΩ typ, Qg 13 nC./p
    • Product Details
    • Download
    At a Glance
    • 700 V / 7 A continuous drain current, TO-252 package
    • Rds(on) 510 mΩ typ, 600 mΩ max at VGS = 10 V
    • Qg 13 nC and Ciss 432 pF
    • N-channel, Super Junction process

    The CR Micro CRJD600N70G2M is a 700 V 7 A N-channel MOSFET in a TO-252 package, built on the Super Junction process. On-resistance is 510 mΩ typical and 600 mΩ maximum at a 10 V gate drive; gate charge is 13 nC with 432 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)700 V
    Continuous Drain Current (ID)7 A
    Rds(on) @ VGS = 10 V, typ.510 mΩ
    Rds(on) @ VGS = 10 V, max.600 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)13 nC
    Input Capacitance (Ciss)432 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-252

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJD360N70G2700V12A33038026753TO-252
    CRJD440N70G2700V10A39044020573TO-252
    CRJD600N70G2M700V7A51060013432TO-252
    CRJD600N70G2700V8A54060015472TO-252
    CRJD900N70G2700V6A78090011325TO-252
    CS7N70A4R-G700V7A960115026.51556TO-252
    CRJD1K4N70G2E700V4A1150140010.2247TO-252
    CS6N70A4R-G700V6A12801600261102TO-252
    CS4N70A4D-G700V4A2500280015500TO-252
    CS4N70A4R700V4A2550300012.7606TO-252

    10 part numbers share the same 700 / TO-252 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJD600N70G2M an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 700 V.

    Can the CRJD600N70G2M be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJD600N70G2M?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJD600N70G2M need?

    Qg is 13 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJD600N70G2M come in?

    TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 10 part numbers in this rating group?

    All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products