CRJF800N95G2E CR Micro 950V 7A N-Channel MOSFET TO-220F
CRJF800N95G2E CR Micro 950V 7A N-Channel MOSFET TO-220F

CRJF800N95G2E CR Micro 950V 7A N-Channel MOSFET TO-220F

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pCRJF800N95G2E CR Micro 950V 7A N-Channel MOSFET TO-220F — Rds(on) 700 mΩ typ, Qg 18 nC./p
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    At a Glance
    • 950 V / 7 A continuous drain current, TO-220F package
    • Rds(on) 700 mΩ typ, 800 mΩ max at VGS = 10 V
    • Qg 18 nC and Ciss 611 pF
    • N-channel, Super Junction process

    The CR Micro CRJF800N95G2E is a 950 V 7 A N-channel MOSFET in a TO-220F package, built on the Super Junction process. On-resistance is 700 mΩ typical and 800 mΩ maximum at a 10 V gate drive; gate charge is 18 nC with 611 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)950 V
    Continuous Drain Current (ID)7 A
    Rds(on) @ VGS = 10 V, typ.700 mΩ
    Rds(on) @ VGS = 10 V, max.800 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)18 nC
    Input Capacitance (Ciss)611 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-220F

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJF340N95G2E950V16A315360371290TO-220F
    CRJF800N95G2E950V7A70080018611TO-220F
    CRJF1KN95G2E950V6A750100015.6492TO-220F

    3 part numbers share the same 950 / TO-220F / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJF800N95G2E an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 950 V.

    Can the CRJF800N95G2E be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJF800N95G2E?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJF800N95G2E need?

    Qg is 18 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJF800N95G2E come in?

    TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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