CRJH390N65GC CR Micro 650V 11A N-Channel MOSFET TO-251
CRJH390N65GC CR Micro 650V 11A N-Channel MOSFET TO-251

CRJH390N65GC CR Micro 650V 11A N-Channel MOSFET TO-251

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pCRJH390N65GC CR Micro 650V 11A N-Channel MOSFET TO-251 — Rds(on) 390 mΩ typ, Qg 22 nC./p
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    At a Glance
    • 650 V / 11 A continuous drain current, TO-251 package
    • Rds(on) 390 mΩ typ, 450 mΩ max at VGS = 10 V
    • Qg 22 nC and Ciss 790 pF
    • N-channel, Super Junction process

    The CR Micro CRJH390N65GC is a 650 V 11 A N-channel MOSFET in a TO-251 package, built on the Super Junction process. On-resistance is 390 mΩ typical and 450 mΩ maximum at a 10 V gate drive; gate charge is 22 nC with 790 pF input capacitance; threshold voltage spans 3.5 to 4.5 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)11 A
    Rds(on) @ VGS = 10 V, typ.390 mΩ
    Rds(on) @ VGS = 10 V, max.450 mΩ
    Gate Threshold Voltage (VGS(th))3.5 – 4.5 V
    Total Gate Charge (Qg)22 nC
    Input Capacitance (Ciss)790 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-251

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJH390N65GC650V11A39045022790TO-251
    CS8N65A3R-G650V8A8601000291540TO-251
    CR7N65A3K650V7A12001400241080TO-251
    CS7N65A31RC-G650V7A1200140023.31114TO-251
    CS7N65A3R650V7A12001400241130TO-251
    CS7N65A3RC-G650V7A1200140023.31114TO-251
    CS5N65A3650V5A1600190019706TO-251
    CR4N65A3K650V4A2400280015.8564TO-251
    CS4N65A3R650V4A2400280014.5610TO-251
    CS2N65A3R-G650V2A420050009.5335TO-251

    10 part numbers share the same 650 / TO-251 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJH390N65GC an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CRJH390N65GC be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJH390N65GC?

    VGS(th) is specified between 3.5 and 4.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJH390N65GC need?

    Qg is 22 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJH390N65GC come in?

    TO-251. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 10 part numbers in this rating group?

    All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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