CRJQ15N30G4FZ CR Micro 300V 114A N-Channel MOSFET TO-247
CRJQ15N30G4FZ CR Micro 300V 114A N-Channel MOSFET TO-247

CRJQ15N30G4FZ CR Micro 300V 114A N-Channel MOSFET TO-247

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pCRJQ15N30G4FZ CR Micro 300V 114A N-Channel MOSFET TO-247 — Rds(on) 10 mΩ typ, Qg 150 nC./p
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    At a Glance
    • 300 V / 114 A continuous drain current, TO-247 package
    • Rds(on) 10 mΩ typ, 15 mΩ max at VGS = 10 V
    • Qg 150 nC and Ciss 6800 pF
    • N-channel, Super Junction process

    The CR Micro CRJQ15N30G4FZ is a 300 V 114 A N-channel MOSFET in a TO-247 package, built on the Super Junction process. On-resistance is 10 mΩ typical and 15 mΩ maximum at a 10 V gate drive; gate charge is 150 nC with 6800 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)300 V
    Continuous Drain Current (ID)114 A
    Rds(on) @ VGS = 10 V, typ.10 mΩ
    Rds(on) @ VGS = 10 V, max.15 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)150 nC
    Input Capacitance (Ciss)6800 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJQ07N30G4Z300V214A6726011900TO-247
    CRJQ15N30G4FZ300V114A10151506800TO-247
    CS70N30AKR-G300V70A3642136.28280TO-247

    3 part numbers share the same 300 / TO-247 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    Power factor correction, LLC resonant stages, and LED drivers in offline supplies.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJQ15N30G4FZ an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 300 V.

    Can the CRJQ15N30G4FZ be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJQ15N30G4FZ?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJQ15N30G4FZ need?

    Qg is 150 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJQ15N30G4FZ come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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