CRJS750N80G2EQ CR Micro 800V 7A N-Channel MOSFET TO-263
CRJS750N80G2EQ CR Micro 800V 7A N-Channel MOSFET TO-263

CRJS750N80G2EQ CR Micro 800V 7A N-Channel MOSFET TO-263

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pCRJS750N80G2EQ CR Micro 800V 7A N-Channel MOSFET TO-263 — Rds(on) 650 mΩ typ, Qg 15.3 nC./p
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    At a Glance
    • 800 V / 7 A continuous drain current, TO-263 package
    • Rds(on) 650 mΩ typ, 750 mΩ max at VGS = 10 V
    • Qg 15.3 nC and Ciss 495 pF
    • N-channel, Super Junction process

    The CR Micro CRJS750N80G2EQ is a 800 V 7 A N-channel MOSFET in a TO-263 package, built on the Super Junction process. On-resistance is 650 mΩ typical and 750 mΩ maximum at a 10 V gate drive; gate charge is 15.3 nC with 495 pF input capacitance; threshold voltage spans 3 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)800 V
    Continuous Drain Current (ID)7 A
    Rds(on) @ VGS = 10 V, typ.650 mΩ
    Rds(on) @ VGS = 10 V, max.750 mΩ
    Gate Threshold Voltage (VGS(th))3 – 4 V
    Total Gate Charge (Qg)15.3 nC
    Input Capacitance (Ciss)495 pF
    Channel PolarityN-channel
    Process FamilySuper Junction
    PackageTO-263

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJS180N80G2E800V25A145180532056TO-263
    CRJS280N80G2E800V17A24028036.71368TO-263
    CRJS750N80G2EQ800V7A65075015.3495TO-263

    3 part numbers share the same 800 / TO-263 / N rating — sorted by rds(on) typ.

    Process Technology

    Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.

    Applications

    High-voltage offline supplies, active clamp topologies, and single-stage PFC.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRJS750N80G2EQ an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 800 V.

    Can the CRJS750N80G2EQ be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRJS750N80G2EQ?

    VGS(th) is specified between 3 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRJS750N80G2EQ need?

    Qg is 15.3 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRJS750N80G2EQ come in?

    TO-263. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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