
The CR Micro CRJS80N65G4FZ is a 650 V 35 A N-channel MOSFET in a TO-263 package, built on the Super Junction process. On-resistance is 68 mΩ typical and 80 mΩ maximum at a 10 V gate drive; gate charge is 58 nC with 2550 pF input capacitance; threshold voltage spans 3 to 5 V.
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 35 A |
| Rds(on) @ VGS = 10 V, typ. | 68 mΩ |
| Rds(on) @ VGS = 10 V, max. | 80 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 – 5 V |
| Total Gate Charge (Qg) | 58 nC |
| Input Capacitance (Ciss) | 2550 pF |
| Channel Polarity | N-channel |
| Process Family | Super Junction |
| Package | TO-263 |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRJS50N65G4BFZ | 650V | 51A | 40 | 50 | 93 | 4100 | TO-263 |
| CRJS65N65G4FZ | 650V | 42A | 46 | 65 | 77 | 3450 | TO-263 |
| CRJS80N65G4FZ | 650V | 35A | 68 | 80 | 58 | 2550 | TO-263 |
| CRJS99N65G2 | 650V | 32A | 81 | 99 | 70 | 2400 | TO-263 |
| CRJS99N65G4FZ | 650V | 27A | 82 | 99 | 45 | 2000 | TO-263 |
| CRJS110N65G4FZ | 650V | 27A | 88 | 110 | 43 | 1900 | TO-263 |
| CRJS99N65G2BF | 650V | 31A | 90 | 103 | 70 | 1900 | TO-263 |
| CRJS140N65G2F | 650V | 24A | 110 | 140 | 46 | 1595 | TO-263 |
| CRJS140N65G4Z | 650V | 21A | 112 | 140 | 34 | 1540 | TO-263 |
| CRJS145N65G4FZ | 650V | 20A | 120 | 145 | 32 | 1380 | TO-263 |
| CRJS180N65G2 | 650V | 20A | 145 | 180 | 36 | 1114 | TO-263 |
| CRJS185N65G4Z | 650V | 17A | 150 | 185 | 25 | 1150 | TO-263 |
| CRJS190N65G4MF | 650V | 16A | 155 | 190 | 24 | 1070 | TO-263 |
| CRJS190N65G4F | 650V | 16A | 160 | 190 | 24 | 1030 | TO-263 |
| CRJS190N65GC | 650V | 20A | 160 | 190 | 49 | 1788 | TO-263 |
| CRJS190N65G2BF | 650V | 19A | 165 | 190 | 36 | 1100 | TO-263 |
| CRJS190N65GCF | 650V | 20A | 185 | 210 | 41 | 1459 | TO-263 |
| CRJS240N65G4 | 650V | 13A | 190 | 240 | 21 | 930 | TO-263 |
| CRJS240N65G4F | 650V | 13A | 200 | 240 | 20 | 850 | TO-263 |
| CRJS290N65G4 | 650V | 11A | 240 | 290 | 18 | 800 | TO-263 |
| CRJS290N65G4F | 650V | 11A | 255 | 290 | 17 | 725 | TO-263 |
| CRJS290N65G2 | 650V | 13A | 270 | 300 | 23.5 | 750 | TO-263 |
| CRJS380N65G2 | 650V | 11A | 330 | 380 | 20 | 572 | TO-263 |
| CRJS390N65GC | 650V | 11A | 390 | 450 | 22 | 790 | TO-263 |
| CS16N65A0R | 650V | 16A | 510 | 560 | 50.5 | 2437 | TO-263 |
| CS12N65A0R-G | 650V | 12A | 660 | 800 | 40 | 1993 | TO-263 |
| CS10N65A0R | 650V | 10A | 860 | 1000 | 32 | 1642 | TO-263 |
| CS7N65A0R | 650V | 7A | 1200 | 1400 | 24 | 1130 | TO-263 |
28 part numbers share the same 650 / TO-263 / N rating — sorted by rds(on) typ.
Super Junction — alternating p/n pillars in the drift region cancel part of the vertical field, so Rds(on) grows almost linearly with breakdown voltage instead of quadratically. Best Rds(on) per unit area in the 500–800 V band, at the cost of a harder body-diode reverse recovery and more sensitivity to dv/dt during commutation.
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Is the CRJS80N65G4FZ an N-channel or P-channel device?
It is N-channel. The drain-source rating is 650 V.
Can the CRJS80N65G4FZ be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRJS80N65G4FZ?
VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRJS80N65G4FZ need?
Qg is 58 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRJS80N65G4FZ come in?
TO-263. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 28 part numbers in this rating group?
All 28 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd