CRMB0401C CR Micro 40V 11A Complementary MOSFET PDFN3.3x3.3D

The CR Micro CRMB0401C is a 40 V 11 A N-channel complementary MOSFET in a PDFN3.3x3.3D package. One N-channel and one P-channel die share the package. On-resistance is 30 mΩ typical and 38 mΩ maximum at a 10 V gate drive; 36 mΩ typical at 4.5 V, so it also works from a logic-level driver; threshold voltage spans 1 to 2.5 V.

Key Specifications

Applications

Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.

Selection Notes

• The two dies share a package but not a thermal path. Check whether the configuration is complementary, dual, common drain or series before wiring it into a topology.
• In complementary parts the N and P dies have different Rds(on) and Qg. Match the drive separately rather than assuming symmetry.
• Common-drain parts suit load switch and battery protection circuits where the two sources tie together — the body diodes then oppose each other and block in both directions.
• Because both dies sit on one leadframe, total dissipation is limited by the package, not by the individual die ratings.

Common Questions

Is the CRMB0401C an N-channel or P-channel device?

It is N-channel. The drain-source rating is 40 V.

Can the CRMB0401C be driven from a 4.5 V logic-level gate signal?

Yes. The datasheet characterises Rds(on) at 4.5 V: 36 mΩ typical and 45 mΩ maximum.

What is the gate threshold voltage of the CRMB0401C?

VGS(th) is specified between 1 and 2.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

What package does the CRMB0401C come in?

PDFN3.3x3.3D. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.