CRMM4100C CR Micro 100V 4A Complementary MOSFET SOP-8

The CR Micro CRMM4100C is a 100 V 4 A N-channel complementary MOSFET in a SOP-8 package. One N-channel and one P-channel die share the package. On-resistance is 75 mΩ typical and 90 mΩ maximum at a 10 V gate drive; 85 mΩ typical at 4.5 V, so it also works from a logic-level driver; threshold voltage spans 1.7 to 2.7 V.

Key Specifications

Applications

Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.

Selection Notes

• The two dies share a package but not a thermal path. Check whether the configuration is complementary, dual, common drain or series before wiring it into a topology.
• In complementary parts the N and P dies have different Rds(on) and Qg. Match the drive separately rather than assuming symmetry.
• Common-drain parts suit load switch and battery protection circuits where the two sources tie together — the body diodes then oppose each other and block in both directions.
• Because both dies sit on one leadframe, total dissipation is limited by the package, not by the individual die ratings.

Common Questions

Is the CRMM4100C an N-channel or P-channel device?

It is N-channel. The drain-source rating is 100 V.

Can the CRMM4100C be driven from a 4.5 V logic-level gate signal?

Yes. The datasheet characterises Rds(on) at 4.5 V: 85 mΩ typical and 102 mΩ maximum.

What is the gate threshold voltage of the CRMM4100C?

VGS(th) is specified between 1.7 and 2.7 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

What package does the CRMM4100C come in?

SOP-8. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.