
The CR Micro CRSD090N10N4Z is a 100 V 74 A N-channel MOSFET in a TO-252 or DPAK package, built on the SGT process. On-resistance is 8.3 mΩ typical and 10 mΩ maximum at a 10 V gate drive; gate charge is 31 nC with 2130 pF input capacitance; threshold voltage spans 2.2 to 3.8 V.
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 74 A |
| Rds(on) @ VGS = 10 V, typ. | 8.3 mΩ |
| Rds(on) @ VGS = 10 V, max. | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.2 – 3.8 V |
| Total Gate Charge (Qg) | 31 nC |
| Input Capacitance (Ciss) | 2130 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | TO-252 or DPAK |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRSD050N10L4Z | 100V | 80A | 4 | 5 | 58 | 3453 | TO-252 or DPAK |
| CRSD080N10L4Z | 100V | 80A | 6.3 | 8 | 37 | 2086 | TO-252 or DPAK |
| CRSD082N10L2 | 100V | 78A | 7.2 | 8.6 | 44.5 | 2626 | TO-252 or DPAK |
| CRSD090N10N4Z | 100V | 74A | 8.3 | 10 | 31 | 2130 | TO-252 or DPAK |
| CRSD130N10L2 | 100V | 65A | 11 | 13.2 | 28 | 1618 | TO-252 or DPAK |
| CRSD130N10L4Z | 100V | 50A | 11.4 | 14 | 18.7 | 1052 | TO-252 or DPAK |
| CS55N10A4 | 100V | 55A | 12 | 15 | 112.65 | 5401 | TO-252 or DPAK |
| CRTD170N10N | 100V | 53A | 15 | 17 | 84 | 4172 | TO-252 or DPAK |
| CRTD260N10N | 100V | 46A | 16 | 20 | 39 | 1685 | TO-252 or DPAK |
| CRTD360N10L | 100V | 36A | 30 | 36 | 60 | 2512 | TO-252 or DPAK |
| CRTD360N10LZ | 100V | 36A | 30 | 36 | 60 | 2512 | TO-252 or DPAK |
| CS17N10A4 | 100V | 17A | 53 | 67 | 25.9 | 1194 | TO-252 or DPAK |
| CS17N10A4-G | 100V | 17A | 53 | 67 | 25.9 | 1194 | TO-252 or DPAK |
| CRTD700N10S-V-G | 100V | 13A | 57 | 70 | 25.3 | 1100 | TO-252 or DPAK |
| CS14N10A4 | 100V | 14A | 113 | 150 | 11.5 | 557 | TO-252 or DPAK |
15 part numbers share the same 100 / TO-252 or DPAK / N rating — sorted by rds(on) typ.
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Is the CRSD090N10N4Z an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRSD090N10N4Z be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRSD090N10N4Z?
VGS(th) is specified between 2.2 and 3.8 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRSD090N10N4Z need?
Qg is 31 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRSD090N10N4Z come in?
TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 15 part numbers in this rating group?
All 15 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd