CRSD130N10L4Z CR Micro 100V 50A N-Channel MOSFET TO-252 or DPAK
CRSD130N10L4Z CR Micro 100V 50A N-Channel MOSFET TO-252 or DPAK

CRSD130N10L4Z CR Micro 100V 50A N-Channel MOSFET TO-252 or DPAK

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pCRSD130N10L4Z CR Micro 100V 50A N-Channel MOSFET TO-252 or DPAK — Rds(on) 11.4 mΩ typ, Qg 18.7 nC./p
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    At a Glance
    • 100 V / 50 A continuous drain current, TO-252 or DPAK package
    • Rds(on) 11.4 mΩ typ, 14 mΩ max at VGS = 10 V
    • Qg 18.7 nC and Ciss 1052 pF
    • N-channel, SGT process

    The CR Micro CRSD130N10L4Z is a 100 V 50 A N-channel MOSFET in a TO-252 or DPAK package, built on the SGT process. On-resistance is 11.4 mΩ typical and 14 mΩ maximum at a 10 V gate drive; gate charge is 18.7 nC with 1052 pF input capacitance; threshold voltage spans 1.5 to 2.5 V.

    Key Specifications

    Drain-Source Voltage (VDS)100 V
    Continuous Drain Current (ID)50 A
    Rds(on) @ VGS = 10 V, typ.11.4 mΩ
    Rds(on) @ VGS = 10 V, max.14 mΩ
    Gate Threshold Voltage (VGS(th))1.5 – 2.5 V
    Total Gate Charge (Qg)18.7 nC
    Input Capacitance (Ciss)1052 pF
    Channel PolarityN-channel
    Process FamilySGT
    PackageTO-252 or DPAK

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRSD050N10L4Z100V80A45583453TO-252 or DPAK
    CRSD080N10L4Z100V80A6.38372086TO-252 or DPAK
    CRSD082N10L2100V78A7.28.644.52626TO-252 or DPAK
    CRSD090N10N4Z100V74A8.310312130TO-252 or DPAK
    CRSD130N10L2100V65A1113.2281618TO-252 or DPAK
    CRSD130N10L4Z100V50A11.41418.71052TO-252 or DPAK
    CS55N10A4100V55A1215112.655401TO-252 or DPAK
    CRTD170N10N100V53A1517844172TO-252 or DPAK
    CRTD260N10N100V46A1620391685TO-252 or DPAK
    CRTD360N10L100V36A3036602512TO-252 or DPAK
    CRTD360N10LZ100V36A3036602512TO-252 or DPAK
    CS17N10A4100V17A536725.91194TO-252 or DPAK
    CS17N10A4-G100V17A536725.91194TO-252 or DPAK
    CRTD700N10S-V-G100V13A577025.31100TO-252 or DPAK
    CS14N10A4100V14A11315011.5557TO-252 or DPAK

    15 part numbers share the same 100 / TO-252 or DPAK / N rating — sorted by rds(on) typ.

    Process Technology

    SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.

    Applications

    Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRSD130N10L4Z an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 100 V.

    Can the CRSD130N10L4Z be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRSD130N10L4Z?

    VGS(th) is specified between 1.5 and 2.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRSD130N10L4Z need?

    Qg is 18.7 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRSD130N10L4Z come in?

    TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 15 part numbers in this rating group?

    All 15 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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