CRSE120N10L2 CR Micro 100V 11A N-Channel MOSFET SOP-8
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- 100 V / 11 A continuous drain current, SOP-8 package
- Rds(on) 11 mΩ typ, 13.2 mΩ max at VGS = 10 V
- Qg 28 nC and Ciss 1618 pF
- N-channel, SGT process
The CR Micro CRSE120N10L2 is a 100 V 11 A N-channel MOSFET in a SOP-8 package, built on the SGT process. On-resistance is 11 mΩ typical and 13.2 mΩ maximum at a 10 V gate drive; 14 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 28 nC with 1618 pF input capacitance; threshold voltage spans 1.4 to 2.2 V.
Key Specifications
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 11 A |
| Rds(on) @ VGS = 10 V, typ. | 11 mΩ |
| Rds(on) @ VGS = 10 V, max. | 13.2 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 14 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 16.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.4 – 2.2 V |
| Total Gate Charge (Qg) | 28 nC |
| Input Capacitance (Ciss) | 1618 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | SOP-8 |
Process Technology
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRSE120N10L2 an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRSE120N10L2 be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 14 mΩ typical and 16.5 mΩ maximum.
What is the gate threshold voltage of the CRSE120N10L2?
VGS(th) is specified between 1.4 and 2.2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRSE120N10L2 need?
Qg is 28 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRSE120N10L2 come in?
SOP-8. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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