CRSQ043N18N3DZ CR Micro 180V 140A N-Channel MOSFET TO-247
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- 180 V / 140 A continuous drain current, TO-247 package
- Rds(on) 3.8 mΩ typ, 4.3 mΩ max at VGS = 10 V
- Qg 154.8 nC and Ciss 10156 pF
- N-channel, SGT process
The CR Micro CRSQ043N18N3DZ is a 180 V 140 A N-channel MOSFET in a TO-247 package, built on the SGT process. On-resistance is 3.8 mΩ typical and 4.3 mΩ maximum at a 10 V gate drive; gate charge is 154.8 nC with 10156 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 180 V |
| Continuous Drain Current (ID) | 140 A |
| Rds(on) @ VGS = 10 V, typ. | 3.8 mΩ |
| Rds(on) @ VGS = 10 V, max. | 4.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 154.8 nC |
| Input Capacitance (Ciss) | 10156 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | TO-247 |
Process Technology
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Applications
Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRSQ043N18N3DZ an N-channel or P-channel device?
It is N-channel. The drain-source rating is 180 V.
Can the CRSQ043N18N3DZ be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRSQ043N18N3DZ?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRSQ043N18N3DZ need?
Qg is 154.8 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRSQ043N18N3DZ come in?
TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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