CRSS109N20NZ-Q CR Micro 200V 105A N-Channel MOSFET TO-263 or D2PAK
CRSS109N20NZ-Q CR Micro 200V 105A N-Channel MOSFET TO-263 or D2PAK

CRSS109N20NZ-Q CR Micro 200V 105A N-Channel MOSFET TO-263 or D2PAK

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pCRSS109N20NZ-Q CR Micro 200V 105A N-Channel MOSFET TO-263 or D2PAK — Rds(on) 8.5 mΩ typ, Qg 69 nC./p
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    At a Glance
    • 200 V / 105 A continuous drain current, TO-263 or D2PAK package
    • Rds(on) 8.5 mΩ typ, 10.9 mΩ max at VGS = 10 V
    • Qg 69 nC and Ciss 4819 pF
    • N-channel, SGT process

    The CR Micro CRSS109N20NZ-Q is a 200 V 105 A N-channel MOSFET in a TO-263 or D2PAK package, built on the SGT process. On-resistance is 8.5 mΩ typical and 10.9 mΩ maximum at a 10 V gate drive; gate charge is 69 nC with 4819 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)200 V
    Continuous Drain Current (ID)105 A
    Rds(on) @ VGS = 10 V, typ.8.5 mΩ
    Rds(on) @ VGS = 10 V, max.10.9 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)69 nC
    Input Capacitance (Ciss)4819 pF
    Channel PolarityN-channel
    Process FamilySGT
    PackageTO-263 or D2PAK

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRSS109N20N200V105A8.510.3694819TO-263 or D2PAK
    CRSS109N20NZ200V100A8.510.9694819TO-263 or D2PAK
    CRSS109N20NZ-Q200V105A8.510.9694819TO-263 or D2PAK
    CRSS152N20N3200V80A1315.555.43536TO-263 or D2PAK
    CRSS187N20N3200V65A16.218.7392654TO-263 or D2PAK

    5 part numbers share the same 200 / TO-263 or D2PAK / N rating — sorted by rds(on) typ.

    Process Technology

    SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRSS109N20NZ-Q an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 200 V.

    Can the CRSS109N20NZ-Q be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRSS109N20NZ-Q?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRSS109N20NZ-Q need?

    Qg is 69 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRSS109N20NZ-Q come in?

    TO-263 or D2PAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 5 part numbers in this rating group?

    All 5 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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