CRST049N08N CR Micro 85V 120A N-Channel MOSFET TO-220
CRST049N08N CR Micro 85V 120A N-Channel MOSFET TO-220

CRST049N08N CR Micro 85V 120A N-Channel MOSFET TO-220

Share
pCRST049N08N CR Micro 85V 120A N-Channel MOSFET TO-220 — Rds(on) 4.1 mΩ typ, Qg 64 nC./p
    • Product Details
    • Download
    At a Glance
    • 85 V / 120 A continuous drain current, TO-220 package
    • Rds(on) 4.1 mΩ typ, 4.9 mΩ max at VGS = 10 V
    • Qg 64 nC and Ciss 4207 pF
    • N-channel, SGT process

    The CR Micro CRST049N08N is a 85 V 120 A N-channel MOSFET in a TO-220 package, built on the SGT process. On-resistance is 4.1 mΩ typical and 4.9 mΩ maximum at a 10 V gate drive; gate charge is 64 nC with 4207 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)85 V
    Continuous Drain Current (ID)120 A
    Rds(on) @ VGS = 10 V, typ.4.1 mΩ
    Rds(on) @ VGS = 10 V, max.4.9 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)64 nC
    Input Capacitance (Ciss)4207 pF
    Channel PolarityN-channel
    Process FamilySGT
    PackageTO-220

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRST025N08N85V180A22.421712191TO-220
    CRST033N08N85V160A2.531308930TO-220
    CRST041N08N85V120A3.44.1746050TO-220
    CRST049N08N85V120A4.14.9644207TO-220
    CRST055N08N85V120A4.65.5553086TO-220
    CRST056N08N585V110A4.85.6543638TO-220
    CRST065N08N85V80A5.66.5472860TO-220
    CS120N08A885V120A67.574.44572TO-220

    8 part numbers share the same 85 / TO-220 / N rating — sorted by rds(on) typ.

    Process Technology

    SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.

    Applications

    Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRST049N08N an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 85 V.

    Can the CRST049N08N be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRST049N08N?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRST049N08N need?

    Qg is 64 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRST049N08N come in?

    TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 8 part numbers in this rating group?

    All 8 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products