CRST055N08N3 CR Micro 80V 120A N-Channel MOSFET TO-220
CRST055N08N3 CR Micro 80V 120A N-Channel MOSFET TO-220

CRST055N08N3 CR Micro 80V 120A N-Channel MOSFET TO-220

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pCRST055N08N3 CR Micro 80V 120A N-Channel MOSFET TO-220 — Rds(on) 4.7 mΩ typ, Qg 61.2 nC./p
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    At a Glance
    • 80 V / 120 A continuous drain current, TO-220 package
    • Rds(on) 4.7 mΩ typ, 5.5 mΩ max at VGS = 10 V
    • Qg 61.2 nC and Ciss 3618 pF
    • N-channel, SGT process

    The CR Micro CRST055N08N3 is a 80 V 120 A N-channel MOSFET in a TO-220 package, built on the SGT process. On-resistance is 4.7 mΩ typical and 5.5 mΩ maximum at a 10 V gate drive; gate charge is 61.2 nC with 3618 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)80 V
    Continuous Drain Current (ID)120 A
    Rds(on) @ VGS = 10 V, typ.4.7 mΩ
    Rds(on) @ VGS = 10 V, max.5.5 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)61.2 nC
    Input Capacitance (Ciss)3618 pF
    Channel PolarityN-channel
    Process FamilySGT
    PackageTO-220

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRST022N08N3Z80V180A1.72.2217.512203TO-220
    CRST028N08N3Z80V190A2.52.8149.28067TO-220
    CS180N08A880V180A2.63.31748251TO-220
    CRST038N08N380V120A3.23.889.55485TO-220
    CRTT048N08N80V160A3.64.81375666TO-220
    CRST048N08N380V130A3.94.8714238TO-220
    CRST055N08N380V120A4.75.561.23618TO-220
    CRST060N08N380V100A5646.63004.5TO-220
    CS105N08A880V105A6.28.5783255TO-220
    CRTT084N08N80V110A6.37.81196533TO-220

    10 part numbers share the same 80 / TO-220 / N rating — sorted by rds(on) typ.

    Process Technology

    SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.

    Applications

    Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRST055N08N3 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 80 V.

    Can the CRST055N08N3 be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRST055N08N3?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRST055N08N3 need?

    Qg is 61.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRST055N08N3 come in?

    TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 10 part numbers in this rating group?

    All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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