CRST072N12N CR Micro 120V 115A N-Channel MOSFET TO-220
CRST072N12N CR Micro 120V 115A N-Channel MOSFET TO-220

CRST072N12N CR Micro 120V 115A N-Channel MOSFET TO-220

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pCRST072N12N CR Micro 120V 115A N-Channel MOSFET TO-220 — Rds(on) 6.2 mΩ typ, Qg 51.3 nC./p
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    At a Glance
    • 120 V / 115 A continuous drain current, TO-220 package
    • Rds(on) 6.2 mΩ typ, 7.2 mΩ max at VGS = 10 V
    • Qg 51.3 nC and Ciss 3416 pF
    • N-channel, SGT process

    The CR Micro CRST072N12N is a 120 V 115 A N-channel MOSFET in a TO-220 package, built on the SGT process. On-resistance is 6.2 mΩ typical and 7.2 mΩ maximum at a 10 V gate drive; gate charge is 51.3 nC with 3416 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)120 V
    Continuous Drain Current (ID)115 A
    Rds(on) @ VGS = 10 V, typ.6.2 mΩ
    Rds(on) @ VGS = 10 V, max.7.2 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)51.3 nC
    Input Capacitance (Ciss)3416 pF
    Channel PolarityN-channel
    Process FamilySGT
    PackageTO-220

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRST036N12N3Z120V180A2.83.6146.99560TO-220
    CRST042N12N120V160A3.54.275.35526TO-220
    CRST047N12N120V160A3.94.767.55097TO-220
    CRST058N12N120V130A4.85.8805548TO-220
    CRST072N12N120V115A6.27.251.33416TO-220
    CRTT095N12N120V112A7.39.51275996TO-220
    CRST090N12N120V110A7.59473491.7TO-220

    7 part numbers share the same 120 / TO-220 / N rating — sorted by rds(on) typ.

    Process Technology

    SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRST072N12N an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 120 V.

    Can the CRST072N12N be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRST072N12N?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRST072N12N need?

    Qg is 51.3 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRST072N12N come in?

    TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 7 part numbers in this rating group?

    All 7 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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