CRSY140N10L2Q CR Micro 100V 80A N-Channel MOSFET LFPAK5x6
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- 100 V / 80 A continuous drain current, LFPAK5x6 package
- Rds(on) 6.5 mΩ typ, 8.2 mΩ max at VGS = 10 V
- Qg 40 nC and Ciss 2260 pF
- N-channel, SGT process
The CR Micro CRSY140N10L2Q is a 100 V 80 A N-channel MOSFET in a LFPAK5x6 package, built on the SGT process. On-resistance is 6.5 mΩ typical and 8.2 mΩ maximum at a 10 V gate drive; 8.5 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 40 nC with 2260 pF input capacitance; threshold voltage spans 1.2 to 2.2 V.
Key Specifications
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 80 A |
| Rds(on) @ VGS = 10 V, typ. | 6.5 mΩ |
| Rds(on) @ VGS = 10 V, max. | 8.2 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 8.5 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.2 – 2.2 V |
| Total Gate Charge (Qg) | 40 nC |
| Input Capacitance (Ciss) | 2260 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | LFPAK5x6 |
Process Technology
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRSY140N10L2Q an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRSY140N10L2Q be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 8.5 mΩ typical and 10 mΩ maximum.
What is the gate threshold voltage of the CRSY140N10L2Q?
VGS(th) is specified between 1.2 and 2.2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRSY140N10L2Q need?
Qg is 40 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRSY140N10L2Q come in?
LFPAK5x6. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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