CRSZ180N25N5Z CR Micro 250V 100A N-Channel MOSFET TOLL
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- 250 V / 100 A continuous drain current, TOLL package
- Rds(on) 15.8 mΩ typ, 18 mΩ max at VGS = 10 V
- Qg 61.2 nC and Ciss 4370 pF
- N-channel, SGT process
The CR Micro CRSZ180N25N5Z is a 250 V 100 A N-channel MOSFET in a TOLL package, built on the SGT process. On-resistance is 15.8 mΩ typical and 18 mΩ maximum at a 10 V gate drive; gate charge is 61.2 nC with 4370 pF input capacitance; threshold voltage spans 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) | 100 A |
| Rds(on) @ VGS = 10 V, typ. | 15.8 mΩ |
| Rds(on) @ VGS = 10 V, max. | 18 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 61.2 nC |
| Input Capacitance (Ciss) | 4370 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | TOLL |
Process Technology
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Applications
Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRSZ180N25N5Z an N-channel or P-channel device?
It is N-channel. The drain-source rating is 250 V.
Can the CRSZ180N25N5Z be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRSZ180N25N5Z?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRSZ180N25N5Z need?
Qg is 61.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRSZ180N25N5Z come in?
TOLL. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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