
The CR Micro CRTD025N03L4 is a 30 V 200 A N-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. On-resistance is 1.6 mΩ typical and 2.1 mΩ maximum at a 10 V gate drive; 2.1 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 112.5 nC with 7920 pF input capacitance; threshold voltage spans 0.9 to 2.0 V.
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 200 A |
| Rds(on) @ VGS = 10 V, typ. | 1.6 mΩ |
| Rds(on) @ VGS = 10 V, max. | 2.1 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 2.1 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 3.0 mΩ |
| Gate Threshold Voltage (VGS(th)) | 0.9 – 2.0 V |
| Total Gate Charge (Qg) | 112.5 nC |
| Input Capacitance (Ciss) | 7920 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | TO-252 or DPAK |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRTD019N03L2-G | 30V | 60A | 1.4 | 1.8 | 142 | 7446.8 | TO-252 or DPAK |
| CRTD025N03L4 | 30V | 200A | 1.6 | 2.1 | 112.5 | 7920 | TO-252 or DPAK |
| CS130N03A4 | 30V | 130A | 1.8 | 2.5 | 79.1 | 4893 | TO-252 or DPAK |
| CRTD028N03L4 | 30V | 80A | 2.0 | 2.6 | 100.6 | 4531 | TO-252 or DPAK |
| CRTD028N03L2-G | 30V | 60A | 2.05 | 2.7 | 73 | 3559 | TO-252 or DPAK |
| CRTD030N03L | 30V | 80A | 2.3 | 3 | 108 | 5831 | TO-252 or DPAK |
| CRTD032N03L2P | 30V | 120A | 2.7 | 3.2 | 66.4 | 3467 | TO-252 or DPAK |
| CRTD038N03L4A | 30V | 100A | 2.8 | 3.6 | 55.3 | 2582 | TO-252 or DPAK |
| CRTD045N03L | 30V | 80A | 3.1 | 4.5 | 50 | 2343 | TO-252 or DPAK |
| CS100N03A4-G | 30V | 100A | 3.3 | 4.5 | 48 | 2442 | TO-252 or DPAK |
| CS90N03A4 | 30V | 90A | 3.6 | 5.5 | 53.5 | 2848 | TO-252 or DPAK |
| CRTD055N03L | 30V | 58A | 4.3 | 5.5 | 47 | 2212 | TO-252 or DPAK |
12 part numbers share the same 30 / TO-252 or DPAK / N rating — sorted by rds(on) typ.
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Is the CRTD025N03L4 an N-channel or P-channel device?
It is N-channel. The drain-source rating is 30 V.
Can the CRTD025N03L4 be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 2.1 mΩ typical and 3.0 mΩ maximum.
What is the gate threshold voltage of the CRTD025N03L4?
VGS(th) is specified between 0.9 and 2.0 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTD025N03L4 need?
Qg is 112.5 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTD025N03L4 come in?
TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 12 part numbers in this rating group?
All 12 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd