CRTD028N03L2-G CR Micro 30V 60A N-Channel MOSFET TO-252 or DPAK
CRTD028N03L2-G CR Micro 30V 60A N-Channel MOSFET TO-252 or DPAK

CRTD028N03L2-G CR Micro 30V 60A N-Channel MOSFET TO-252 or DPAK

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pCRTD028N03L2-G CR Micro 30V 60A N-Channel MOSFET TO-252 or DPAK — Rds(on) 2.05 mΩ typ, Qg 73 nC./p
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    At a Glance
    • 30 V / 60 A continuous drain current, TO-252 or DPAK package
    • Rds(on) 2.05 mΩ typ, 2.7 mΩ max at VGS = 10 V
    • Qg 73 nC and Ciss 3559 pF
    • N-channel, Trench process

    The CR Micro CRTD028N03L2-G is a 30 V 60 A N-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. On-resistance is 2.05 mΩ typical and 2.7 mΩ maximum at a 10 V gate drive; 3 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 73 nC with 3559 pF input capacitance; threshold voltage spans 0.8 to 1.8 V.

    Key Specifications

    Drain-Source Voltage (VDS)30 V
    Continuous Drain Current (ID)60 A
    Rds(on) @ VGS = 10 V, typ.2.05 mΩ
    Rds(on) @ VGS = 10 V, max.2.7 mΩ
    Rds(on) @ VGS = 4.5 V, typ.3 mΩ
    Rds(on) @ VGS = 4.5 V, max.3.8 mΩ
    Gate Threshold Voltage (VGS(th))0.8 – 1.8 V
    Total Gate Charge (Qg)73 nC
    Input Capacitance (Ciss)3559 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageTO-252 or DPAK

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRTD019N03L2-G30V60A1.41.81427446.8TO-252 or DPAK
    CRTD025N03L430V200A1.62.1112.57920TO-252 or DPAK
    CS130N03A430V130A1.82.579.14893TO-252 or DPAK
    CRTD028N03L430V80A2.02.6100.64531TO-252 or DPAK
    CRTD028N03L2-G30V60A2.052.7733559TO-252 or DPAK
    CRTD030N03L30V80A2.331085831TO-252 or DPAK
    CRTD032N03L2P30V120A2.73.266.43467TO-252 or DPAK
    CRTD038N03L4A30V100A2.83.655.32582TO-252 or DPAK
    CRTD045N03L30V80A3.14.5502343TO-252 or DPAK
    CS100N03A4-G30V100A3.34.5482442TO-252 or DPAK
    CS90N03A430V90A3.65.553.52848TO-252 or DPAK
    CRTD055N03L30V58A4.35.5472212TO-252 or DPAK

    12 part numbers share the same 30 / TO-252 or DPAK / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRTD028N03L2-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 30 V.

    Can the CRTD028N03L2-G be driven from a 4.5 V logic-level gate signal?

    Yes. The datasheet characterises Rds(on) at 4.5 V: 3 mΩ typical and 3.8 mΩ maximum.

    What is the gate threshold voltage of the CRTD028N03L2-G?

    VGS(th) is specified between 0.8 and 1.8 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRTD028N03L2-G need?

    Qg is 73 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRTD028N03L2-G come in?

    TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 12 part numbers in this rating group?

    All 12 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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