CRTD080P02U2-G CR Micro -20V -50A P-Channel MOSFET TO-252 or DPAK
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- -20 V / -50 A continuous drain current, TO-252 or DPAK package
- Qg 35 nC and Ciss 3499 pF
- P-channel, Trench process
The CR Micro CRTD080P02U2-G is a -20 V -50 A P-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. 6.6 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 35 nC with 3499 pF input capacitance; threshold voltage spans -0.4 to -1 V.
Key Specifications
| Drain-Source Voltage (VDS) | -20 V |
| Continuous Drain Current (ID) | -50 A |
| Rds(on) @ VGS = 4.5 V, typ. | 6.6 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 8 mΩ |
| Gate Threshold Voltage (VGS(th)) | -0.4 – -1 V |
| Total Gate Charge (Qg) | 35 nC |
| Input Capacitance (Ciss) | 3499 pF |
| Channel Polarity | P-channel |
| Process Family | Trench |
| Package | TO-252 or DPAK |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRTD080P02U2-G an N-channel or P-channel device?
It is P-channel. The drain-source rating is -20 V.
Can the CRTD080P02U2-G be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 6.6 mΩ typical and 8 mΩ maximum.
What is the gate threshold voltage of the CRTD080P02U2-G?
VGS(th) is specified between -0.4 and -1 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTD080P02U2-G need?
Qg is 35 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTD080P02U2-G come in?
TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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