CRTD082NE6N CR Micro 65V 85A N-Channel MOSFET TO-252 or DPAK
CRTD082NE6N CR Micro 65V 85A N-Channel MOSFET TO-252 or DPAK

CRTD082NE6N CR Micro 65V 85A N-Channel MOSFET TO-252 or DPAK

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pCRTD082NE6N CR Micro 65V 85A N-Channel MOSFET TO-252 or DPAK — Rds(on) 6.9 mΩ typ, Qg 73 nC./p
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    At a Glance
    • 65 V / 85 A continuous drain current, TO-252 or DPAK package
    • Rds(on) 6.9 mΩ typ, 8.4 mΩ max at VGS = 10 V
    • Qg 73 nC and Ciss 3275 pF
    • N-channel, Trench process

    The CR Micro CRTD082NE6N is a 65 V 85 A N-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. On-resistance is 6.9 mΩ typical and 8.4 mΩ maximum at a 10 V gate drive; gate charge is 73 nC with 3275 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)65 V
    Continuous Drain Current (ID)85 A
    Rds(on) @ VGS = 10 V, typ.6.9 mΩ
    Rds(on) @ VGS = 10 V, max.8.4 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)73 nC
    Input Capacitance (Ciss)3275 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageTO-252 or DPAK

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRTD082NE6N65V85A6.98.4733275TO-252 or DPAK
    CS50N065A465V50A12.81733.91668.6TO-252 or DPAK

    2 part numbers share the same 65 / TO-252 or DPAK / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRTD082NE6N an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 65 V.

    Can the CRTD082NE6N be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CRTD082NE6N?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRTD082NE6N need?

    Qg is 73 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRTD082NE6N come in?

    TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 2 part numbers in this rating group?

    All 2 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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