
The CR Micro CRTD360N10LZ is a 100 V 36 A N-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. On-resistance is 30 mΩ typical and 36 mΩ maximum at a 10 V gate drive; gate charge is 60 nC with 2512 pF input capacitance; threshold voltage spans 1.3 to 2.2 V.
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 36 A |
| Rds(on) @ VGS = 10 V, typ. | 30 mΩ |
| Rds(on) @ VGS = 10 V, max. | 36 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.3 – 2.2 V |
| Total Gate Charge (Qg) | 60 nC |
| Input Capacitance (Ciss) | 2512 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | TO-252 or DPAK |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRSD050N10L4Z | 100V | 80A | 4 | 5 | 58 | 3453 | TO-252 or DPAK |
| CRSD080N10L4Z | 100V | 80A | 6.3 | 8 | 37 | 2086 | TO-252 or DPAK |
| CRSD082N10L2 | 100V | 78A | 7.2 | 8.6 | 44.5 | 2626 | TO-252 or DPAK |
| CRSD090N10N4Z | 100V | 74A | 8.3 | 10 | 31 | 2130 | TO-252 or DPAK |
| CRSD130N10L2 | 100V | 65A | 11 | 13.2 | 28 | 1618 | TO-252 or DPAK |
| CRSD130N10L4Z | 100V | 50A | 11.4 | 14 | 18.7 | 1052 | TO-252 or DPAK |
| CS55N10A4 | 100V | 55A | 12 | 15 | 112.65 | 5401 | TO-252 or DPAK |
| CRTD170N10N | 100V | 53A | 15 | 17 | 84 | 4172 | TO-252 or DPAK |
| CRTD260N10N | 100V | 46A | 16 | 20 | 39 | 1685 | TO-252 or DPAK |
| CRTD360N10L | 100V | 36A | 30 | 36 | 60 | 2512 | TO-252 or DPAK |
| CRTD360N10LZ | 100V | 36A | 30 | 36 | 60 | 2512 | TO-252 or DPAK |
| CS17N10A4 | 100V | 17A | 53 | 67 | 25.9 | 1194 | TO-252 or DPAK |
| CS17N10A4-G | 100V | 17A | 53 | 67 | 25.9 | 1194 | TO-252 or DPAK |
| CRTD700N10S-V-G | 100V | 13A | 57 | 70 | 25.3 | 1100 | TO-252 or DPAK |
| CS14N10A4 | 100V | 14A | 113 | 150 | 11.5 | 557 | TO-252 or DPAK |
15 part numbers share the same 100 / TO-252 or DPAK / N rating — sorted by rds(on) typ.
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Is the CRTD360N10LZ an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRTD360N10LZ be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRTD360N10LZ?
VGS(th) is specified between 1.3 and 2.2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTD360N10LZ need?
Qg is 60 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTD360N10LZ come in?
TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 15 part numbers in this rating group?
All 15 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd