CRTK050N03L4 CR Micro 30V 58A N-Channel MOSFET PDFN3.3×3.3
CRTK050N03L4 CR Micro 30V 58A N-Channel MOSFET PDFN3.3×3.3

CRTK050N03L4 CR Micro 30V 58A N-Channel MOSFET PDFN3.3×3.3

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pCRTK050N03L4 CR Micro 30V 58A N-Channel MOSFET PDFN3.3×3.3 — Rds(on) 4.6 mΩ typ, Qg 36.2 nC./p
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    At a Glance
    • 30 V / 58 A continuous drain current, PDFN3.3×3.3 package
    • Rds(on) 4.6 mΩ typ, 5.5 mΩ max at VGS = 10 V
    • Qg 36.2 nC and Ciss 1531 pF
    • N-channel, Trench process

    The CR Micro CRTK050N03L4 is a 30 V 58 A N-channel MOSFET in a PDFN3.3×3.3 package, built on the Trench process. On-resistance is 4.6 mΩ typical and 5.5 mΩ maximum at a 10 V gate drive; 6.2 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 36.2 nC with 1531 pF input capacitance; threshold voltage spans 1.0 to 2.0 V.

    Key Specifications

    Drain-Source Voltage (VDS)30 V
    Continuous Drain Current (ID)58 A
    Rds(on) @ VGS = 10 V, typ.4.6 mΩ
    Rds(on) @ VGS = 10 V, max.5.5 mΩ
    Rds(on) @ VGS = 4.5 V, typ.6.2 mΩ
    Rds(on) @ VGS = 4.5 V, max.7.8 mΩ
    Gate Threshold Voltage (VGS(th))1.0 – 2.0 V
    Total Gate Charge (Qg)36.2 nC
    Input Capacitance (Ciss)1531 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackagePDFN3.3×3.3

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRTK032N03L2P30V90A2.53.266.43173PDFN3.3×3.3
    CRTK038N03L430V68A3.03.857.62685PDFN3.3×3.3
    CS65N03AQ4-G30V65A3.44.5482442PDFN3.3×3.3
    CRTK050N03L430V58A4.65.536.21531PDFN3.3×3.3

    4 part numbers share the same 30 / PDFN3.3×3.3 / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CRTK050N03L4 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 30 V.

    Can the CRTK050N03L4 be driven from a 4.5 V logic-level gate signal?

    Yes. The datasheet characterises Rds(on) at 4.5 V: 6.2 mΩ typical and 7.8 mΩ maximum.

    What is the gate threshold voltage of the CRTK050N03L4?

    VGS(th) is specified between 1.0 and 2.0 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CRTK050N03L4 need?

    Qg is 36.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRTK050N03L4 come in?

    PDFN3.3×3.3. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 4 part numbers in this rating group?

    All 4 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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