CRTK700N10S-G CR Micro 100V 13A N-Channel MOSFET PDFN3.3×3.3
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- 100 V / 13 A continuous drain current, PDFN3.3×3.3 package
- Rds(on) 57 mΩ typ, 70 mΩ max at VGS = 10 V
- Qg 25.3 nC and Ciss 1102 pF
- N-channel, Trench process
The CR Micro CRTK700N10S-G is a 100 V 13 A N-channel MOSFET in a PDFN3.3×3.3 package, built on the Trench process. On-resistance is 57 mΩ typical and 70 mΩ maximum at a 10 V gate drive; 60 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 25.3 nC with 1102 pF input capacitance; threshold voltage spans 0.6 to 1.6 V.
Key Specifications
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 13 A |
| Rds(on) @ VGS = 10 V, typ. | 57 mΩ |
| Rds(on) @ VGS = 10 V, max. | 70 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 60 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 75 mΩ |
| Gate Threshold Voltage (VGS(th)) | 0.6 – 1.6 V |
| Total Gate Charge (Qg) | 25.3 nC |
| Input Capacitance (Ciss) | 1102 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | PDFN3.3×3.3 |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRTK700N10S-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CRTK700N10S-G be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 60 mΩ typical and 75 mΩ maximum.
What is the gate threshold voltage of the CRTK700N10S-G?
VGS(th) is specified between 0.6 and 1.6 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTK700N10S-G need?
Qg is 25.3 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTK700N10S-G come in?
PDFN3.3×3.3. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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