CRTQ058N06N3Z CR Micro 60V 160A N-Channel MOSFET TO-247
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- 60 V / 160 A continuous drain current, TO-247 package
- Rds(on) 4.4 mΩ typ, 5.8 mΩ max at VGS = 10 V
- Qg 175 nC and Ciss 8493 pF
- N-channel, Trench process
The CR Micro CRTQ058N06N3Z is a 60 V 160 A N-channel MOSFET in a TO-247 package, built on the Trench process. On-resistance is 4.4 mΩ typical and 5.8 mΩ maximum at a 10 V gate drive; gate charge is 175 nC with 8493 pF input capacitance; threshold voltage spans 2.4 to 3.6 V.
Key Specifications
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 160 A |
| Rds(on) @ VGS = 10 V, typ. | 4.4 mΩ |
| Rds(on) @ VGS = 10 V, max. | 5.8 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.4 – 3.6 V |
| Total Gate Charge (Qg) | 175 nC |
| Input Capacitance (Ciss) | 8493 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | TO-247 |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRTQ058N06N3Z an N-channel or P-channel device?
It is N-channel. The drain-source rating is 60 V.
Can the CRTQ058N06N3Z be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRTQ058N06N3Z?
VGS(th) is specified between 2.4 and 3.6 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTQ058N06N3Z need?
Qg is 175 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTQ058N06N3Z come in?
TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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