CRTW020N04N CR Micro 40V 195A N-Channel MOSFET TO-262
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- 40 V / 195 A continuous drain current, TO-262 package
- Rds(on) 1.5 mΩ typ, 2 mΩ max at VGS = 10 V
- Qg 189 nC and Ciss 11900 pF
- N-channel, Trench process
The CR Micro CRTW020N04N is a 40 V 195 A N-channel MOSFET in a TO-262 package, built on the Trench process. On-resistance is 1.5 mΩ typical and 2 mΩ maximum at a 10 V gate drive; gate charge is 189 nC with 11900 pF input capacitance; threshold voltage spans 2.5 to 3.5 V.
Key Specifications
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 195 A |
| Rds(on) @ VGS = 10 V, typ. | 1.5 mΩ |
| Rds(on) @ VGS = 10 V, max. | 2 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.5 – 3.5 V |
| Total Gate Charge (Qg) | 189 nC |
| Input Capacitance (Ciss) | 11900 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | TO-262 |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CRTW020N04N an N-channel or P-channel device?
It is N-channel. The drain-source rating is 40 V.
Can the CRTW020N04N be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CRTW020N04N?
VGS(th) is specified between 2.5 and 3.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CRTW020N04N need?
Qg is 189 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRTW020N04N come in?
TO-262. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
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