CRXSH18M120G4Q CR Micro 1200V 100A SiC MOSFET T2PAK
CRXSH18M120G4Q CR Micro 1200V 100A SiC MOSFET T2PAK

CRXSH18M120G4Q CR Micro 1200V 100A SiC MOSFET T2PAK

Share
pCRXSH18M120G4Q CR Micro 1200V 100A SiC MOSFET T2PAK — Rds(on) 23 mΩ typ, Qg 152 nC./p
    • Product Details
    • Download
    At a Glance
    • 1200 V / 100 A continuous drain current, T2PAK package
    • Rds(on) 23 mΩ typ, 30 mΩ max at VGS = 15 V
    • Qg 152 nC and Ciss 3446 pF
    • N-channel silicon carbide, 4H-SiC

    The CR Micro CRXSH18M120G4Q is a 1200 V 100 A N-channel silicon carbide MOSFET in a T2PAK package. 23 mΩ typical at a 15 V gate drive (30 mΩ maximum); 18 mΩ typical at 18 V; Qg is 152 nC; VGS(th) 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)1200 V
    Continuous Drain Current (ID)100 A
    Rds(on) @ VGS = 15 V, typ.23 mΩ
    Rds(on) @ VGS = 15 V, max.30 mΩ
    Rds(on) @ VGS = 18 V, typ.18 mΩ
    Rds(on) @ VGS = 18 V, max.23 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)152 nC
    Input Capacitance (Ciss)3446 pF
    Channel PolarityN-channel
    PackageT2PAK

    Same-Rating Selection Table

    Part NumberVDSIDRds 15V typRds 15V maxQgCissPackage
    CRXSH18M120G4Q1200V100A23301523446T2PAK
    CRXSH27M120G4Q1200V70A34451072461T2PAK
    CRXSH35M120G4Q1200V55A455679.61826T2PAK
    CRXSH60M120G4Q1200V32A7595T2PAK
    CRXSH75M120G4Q1200V25A94114T2PAK
    CRXSH140M120G4Q1200V14A17522531522T2PAK

    6 part numbers share the same 1200 / T2PAK / N rating — sorted by rds 15v typ.

    Process Technology

    Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
    • The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
    • Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
    • Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.

    Common Questions

    Is the CRXSH18M120G4Q an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 1200 V.

    Can the CRXSH18M120G4Q be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.

    How much gate charge does the CRXSH18M120G4Q need?

    Qg is 152 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRXSH18M120G4Q come in?

    T2PAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 6 part numbers in this rating group?

    All 6 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message