CRXSH25M065G2Q CR Micro 650V 97A SiC MOSFET T2PAK
CRXSH25M065G2Q CR Micro 650V 97A SiC MOSFET T2PAK

CRXSH25M065G2Q CR Micro 650V 97A SiC MOSFET T2PAK

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pCRXSH25M065G2Q CR Micro 650V 97A SiC MOSFET T2PAK — Rds(on) 25 mΩ typ, Qg 133 nC./p
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    At a Glance
    • 650 V / 97 A continuous drain current, T2PAK package
    • Rds(on) 25 mΩ typ, 34 mΩ max at VGS = 15 V
    • Qg 133 nC and Ciss 2775 pF
    • N-channel silicon carbide, 4H-SiC

    The CR Micro CRXSH25M065G2Q is a 650 V 97 A N-channel silicon carbide MOSFET in a T2PAK package. 25 mΩ typical at a 15 V gate drive (34 mΩ maximum); 20 mΩ typical at 18 V; Qg is 133 nC; VGS(th) 1.8 to 3.6 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)97 A
    Rds(on) @ VGS = 15 V, typ.25 mΩ
    Rds(on) @ VGS = 15 V, max.34 mΩ
    Rds(on) @ VGS = 18 V, typ.20 mΩ
    Rds(on) @ VGS = 18 V, max.25 mΩ
    Gate Threshold Voltage (VGS(th))1.8 – 3.6 V
    Total Gate Charge (Qg)133 nC
    Input Capacitance (Ciss)2775 pF
    Channel PolarityN-channel
    PackageT2PAK

    Same-Rating Selection Table

    Part NumberVDSIDRds 15V typRds 15V maxQgCissPackage
    CRXSH25M065G2Q650V97A25341332775T2PAK
    CRXSH45M065G2Q650V49A4560741595T2PAK
    CRXSH60M065G2Q650V37A6079521100T2PAK

    3 part numbers share the same 650 / T2PAK / N rating — sorted by rds 15v typ.

    Process Technology

    Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
    • The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
    • Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
    • Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.

    Common Questions

    Is the CRXSH25M065G2Q an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CRXSH25M065G2Q be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.

    How much gate charge does the CRXSH25M065G2Q need?

    Qg is 133 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRXSH25M065G2Q come in?

    T2PAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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