CRXSP140M120G4Q CR Micro 1200V 14A SiC MOSFET TO-263-7L
CRXSP140M120G4Q CR Micro 1200V 14A SiC MOSFET TO-263-7L

CRXSP140M120G4Q CR Micro 1200V 14A SiC MOSFET TO-263-7L

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pCRXSP140M120G4Q CR Micro 1200V 14A SiC MOSFET TO-263-7L — Rds(on) 175 mΩ typ, Qg 31 nC./p
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    At a Glance
    • 1200 V / 14 A continuous drain current, TO-263-7L package
    • Rds(on) 175 mΩ typ, 225 mΩ max at VGS = 15 V
    • Qg 31 nC and Ciss 522 pF
    • N-channel silicon carbide, 4H-SiC

    The CR Micro CRXSP140M120G4Q is a 1200 V 14 A N-channel silicon carbide MOSFET in a TO-263-7L package. 175 mΩ typical at a 15 V gate drive (225 mΩ maximum); 140 mΩ typical at 18 V; Qg is 31 nC; VGS(th) 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)1200 V
    Continuous Drain Current (ID)14 A
    Rds(on) @ VGS = 15 V, typ.175 mΩ
    Rds(on) @ VGS = 15 V, max.225 mΩ
    Rds(on) @ VGS = 18 V, typ.140 mΩ
    Rds(on) @ VGS = 18 V, max.180 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)31 nC
    Input Capacitance (Ciss)522 pF
    Channel PolarityN-channel
    PackageTO-263-7L

    Same-Rating Selection Table

    Part NumberVDSIDRds 15V typRds 15V maxQgCissPackage
    CRXSP13M120G4Z1200V145A17222024659TO-263-7L
    CRXSP18M120G4Z1200V100A23301523446TO-263-7L
    CRXSP27M120G4Z1200V70A34451072461TO-263-7L
    CRXSP35M120G4Q1200V55A455679.61826TO-263-7L
    CRXSP75M120G2Q1200V32A759069.51406TO-263-7L
    CRXSP75M120G2Z1200V32A759069.51243TO-263-7L
    CRXSPS75M120G2Z1200V32A759069.51406TO-263-7L
    CRXSP75M120G4Q1200V25A9411547899TO-263-7L
    CRXSP75M120G4Z1200V25A9411547899TO-263-7L
    CRXSP160M120G2Q1200V17A16020840.5659TO-263-7L
    CRXSP160M120G2Z1200V17A16020840.5659TO-263-7L
    CRXSP140M120G4Q1200V14A17522531522TO-263-7L
    CRXSP140M120G4Z1200V14A17522531522TO-263-7L

    13 part numbers share the same 1200 / TO-263-7L / N rating — sorted by rds 15v typ.

    Process Technology

    Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
    • The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
    • Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
    • Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.

    Common Questions

    Is the CRXSP140M120G4Q an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 1200 V.

    Can the CRXSP140M120G4Q be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.

    How much gate charge does the CRXSP140M120G4Q need?

    Qg is 31 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRXSP140M120G4Q come in?

    TO-263-7L. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 13 part numbers in this rating group?

    All 13 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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