CRXSP1KM170G2Z CR Micro 1700V 5A SiC MOSFET TO-263-7
- Product Details
- Download
- 1700 V / 5 A continuous drain current, TO-263-7 package
- Rds(on) 895 mΩ typ, 1100 mΩ max at VGS = 15 V
- Qg 14.4 nC and Ciss 172 pF
- N-channel silicon carbide, 4H-SiC
The CR Micro CRXSP1KM170G2Z is a 1700 V 5 A N-channel silicon carbide MOSFET in a TO-263-7 package. 895 mΩ typical at a 15 V gate drive (1100 mΩ maximum); 695 mΩ typical at 18 V; Qg is 14.4 nC; VGS(th) 2 to 4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 1700 V |
| Continuous Drain Current (ID) | 5 A |
| Rds(on) @ VGS = 15 V, typ. | 895 mΩ |
| Rds(on) @ VGS = 15 V, max. | 1100 mΩ |
| Rds(on) @ VGS = 18 V, typ. | 695 mΩ |
| Rds(on) @ VGS = 18 V, max. | 1000 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 14.4 nC |
| Input Capacitance (Ciss) | 172 pF |
| Channel Polarity | N-channel |
| Package | TO-263-7 |
Process Technology
Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.
Applications
Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.
Selection Notes
- Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
- The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
- Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
- Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.
Common Questions
Is the CRXSP1KM170G2Z an N-channel or P-channel device?
It is N-channel. The drain-source rating is 1700 V.
Can the CRXSP1KM170G2Z be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.
How much gate charge does the CRXSP1KM170G2Z need?
Qg is 14.4 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CRXSP1KM170G2Z come in?
TO-263-7. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
Online message
Shenzhen Gaorunxin Technology Co., Ltd
