CRXZ140M120G4Z CR Micro 1200V 14A SiC MOSFET TOLL
CRXZ140M120G4Z CR Micro 1200V 14A SiC MOSFET TOLL

CRXZ140M120G4Z CR Micro 1200V 14A SiC MOSFET TOLL

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pCRXZ140M120G4Z CR Micro 1200V 14A SiC MOSFET TOLL — Rds(on) 175 mΩ typ, Qg 31 nC./p
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    At a Glance
    • 1200 V / 14 A continuous drain current, TOLL package
    • Rds(on) 175 mΩ typ, 225 mΩ max at VGS = 15 V
    • Qg 31 nC and Ciss 522 pF
    • N-channel silicon carbide, 4H-SiC

    The CR Micro CRXZ140M120G4Z is a 1200 V 14 A N-channel silicon carbide MOSFET in a TOLL package. 175 mΩ typical at a 15 V gate drive (225 mΩ maximum); 140 mΩ typical at 18 V; Qg is 31 nC; VGS(th) 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)1200 V
    Continuous Drain Current (ID)14 A
    Rds(on) @ VGS = 15 V, typ.175 mΩ
    Rds(on) @ VGS = 15 V, max.225 mΩ
    Rds(on) @ VGS = 18 V, typ.140 mΩ
    Rds(on) @ VGS = 18 V, max.180 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)31 nC
    Input Capacitance (Ciss)522 pF
    Channel PolarityN-channel
    PackageTOLL

    Same-Rating Selection Table

    Part NumberVDSIDRds 15V typRds 15V maxQgCissPackage
    CRXZ35M120G4Z1200V55A455679.61826TOLL
    CRXZ60M120G4Z1200V32A739552.61135TOLL
    CRXZ75M120G2Z1200V32A759069.51406TOLL
    CRXZ75M120G4Z1200V25A9411547899TOLL
    CRXZ160M120G2Z1200V17A16020840.5659TOLL
    CRXZ140M120G4Z1200V14A17522531522TOLL

    6 part numbers share the same 1200 / TOLL / N rating — sorted by rds 15v typ.

    Process Technology

    Silicon carbide has a critical field roughly ten times that of silicon, so the drift layer can be far thinner for the same blocking voltage. The result is a much lower specific on-resistance at 1200 V and above, and a breakdown voltage that barely moves with temperature. The trade-offs are a narrower gate window and a body diode that should not carry continuous third-quadrant current.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • Silicon carbide holds a much flatter Rds(on) over temperature than silicon, but the gate window is narrow. Drive at 15–18 V on and a negative or zero volt off bias as the datasheet specifies.
    • The body diode is not intended for continuous third-quadrant conduction. Where the topology requires it, check the datasheet's reverse conduction figures or add an external Schottky.
    • Switching speed is limited by the gate loop, not the die. Keep the gate loop inductance low and budget for a negative turn-off spike on the gate.
    • Paralleling needs matched VGS(th). Because VGS(th) spread is narrow the parts parallel well, but layout symmetry still decides current sharing.

    Common Questions

    Is the CRXZ140M120G4Z an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 1200 V.

    Can the CRXZ140M120G4Z be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 15 V gate drive, so use a driver that reaches 15 V.

    How much gate charge does the CRXZ140M120G4Z need?

    Qg is 31 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CRXZ140M120G4Z come in?

    TOLL. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 6 part numbers in this rating group?

    All 6 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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