CS01N60ASRD-G CR Micro 600V 0.04A N-Channel MOSFET SOT-23
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- 600 V / 0.04 A continuous drain current, SOT-23 package
- Rds(on) 160000 mΩ typ, 500000 mΩ max at VGS = 10 V
- Qg 3.1 nC and Ciss 16.3 pF
- N-channel, Planar process
The CR Micro CS01N60ASRD-G is a 600 V 0.04 A N-channel MOSFET in a SOT-23 package, built on the Planar process. On-resistance is 160000 mΩ typical and 500000 mΩ maximum at a 10 V gate drive; 180000 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 3.1 nC with 16.3 pF input capacitance; threshold voltage spans 1.4 to 3.2 V.
Key Specifications
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 0.04 A |
| Rds(on) @ VGS = 10 V, typ. | 160000 mΩ |
| Rds(on) @ VGS = 10 V, max. | 500000 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 180000 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 600000 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.4 – 3.2 V |
| Total Gate Charge (Qg) | 3.1 nC |
| Input Capacitance (Ciss) | 16.3 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | SOT-23 |
Process Technology
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Applications
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS01N60ASRD-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 600 V.
Can the CS01N60ASRD-G be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 180000 mΩ typical and 600000 mΩ maximum.
What is the gate threshold voltage of the CS01N60ASRD-G?
VGS(th) is specified between 1.4 and 3.2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS01N60ASRD-G need?
Qg is 3.1 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS01N60ASRD-G come in?
SOT-23. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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