CS10N15A4 CR Micro 150V 10A N-Channel MOSFET TO-252 or DPAK
CS10N15A4 CR Micro 150V 10A N-Channel MOSFET TO-252 or DPAK

CS10N15A4 CR Micro 150V 10A N-Channel MOSFET TO-252 or DPAK

Share
pCS10N15A4 CR Micro 150V 10A N-Channel MOSFET TO-252 or DPAK — Rds(on) 230 mΩ typ, Qg 11.6 nC./p
    • Product Details
    • Download
    At a Glance
    • 150 V / 10 A continuous drain current, TO-252 or DPAK package
    • Rds(on) 230 mΩ typ, 300 mΩ max at VGS = 10 V
    • Qg 11.6 nC and Ciss 550 pF
    • N-channel, Trench process

    The CR Micro CS10N15A4 is a 150 V 10 A N-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. On-resistance is 230 mΩ typical and 300 mΩ maximum at a 10 V gate drive; 250 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 11.6 nC with 550 pF input capacitance; threshold voltage spans 1.7 to 2.8 V.

    Key Specifications

    Drain-Source Voltage (VDS)150 V
    Continuous Drain Current (ID)10 A
    Rds(on) @ VGS = 10 V, typ.230 mΩ
    Rds(on) @ VGS = 10 V, max.300 mΩ
    Rds(on) @ VGS = 4.5 V, typ.250 mΩ
    Rds(on) @ VGS = 4.5 V, max.330 mΩ
    Gate Threshold Voltage (VGS(th))1.7 – 2.8 V
    Total Gate Charge (Qg)11.6 nC
    Input Capacitance (Ciss)550 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageTO-252 or DPAK

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRTD900N15N150V23A5875271184TO-252 or DPAK
    CS10N15A4150V10A23030011.6550TO-252 or DPAK

    2 part numbers share the same 150 / TO-252 or DPAK / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS10N15A4 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 150 V.

    Can the CS10N15A4 be driven from a 4.5 V logic-level gate signal?

    Yes. The datasheet characterises Rds(on) at 4.5 V: 250 mΩ typical and 330 mΩ maximum.

    What is the gate threshold voltage of the CS10N15A4?

    VGS(th) is specified between 1.7 and 2.8 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS10N15A4 need?

    Qg is 11.6 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS10N15A4 come in?

    TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 2 part numbers in this rating group?

    All 2 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products