CS10N65ARR-G CR Micro 650V 10A N-Channel MOSFET TO-262
CS10N65ARR-G CR Micro 650V 10A N-Channel MOSFET TO-262

CS10N65ARR-G CR Micro 650V 10A N-Channel MOSFET TO-262

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pCS10N65ARR-G CR Micro 650V 10A N-Channel MOSFET TO-262 — Rds(on) 860 mΩ typ, Qg 32 nC./p
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    At a Glance
    • 650 V / 10 A continuous drain current, TO-262 package
    • Rds(on) 860 mΩ typ, 1000 mΩ max at VGS = 10 V
    • Qg 32 nC and Ciss 1642 pF
    • N-channel, Planar process

    The CR Micro CS10N65ARR-G is a 650 V 10 A N-channel MOSFET in a TO-262 package, built on the Planar process. On-resistance is 860 mΩ typical and 1000 mΩ maximum at a 10 V gate drive; gate charge is 32 nC with 1642 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)10 A
    Rds(on) @ VGS = 10 V, typ.860 mΩ
    Rds(on) @ VGS = 10 V, max.1000 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)32 nC
    Input Capacitance (Ciss)1642 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-262

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS12N65ARR650V12A660800401993TO-262
    CS10N65ARR-G650V10A8601000321642TO-262
    CS8N65ARR650V8A8601000291540TO-262
    CS7N65ARR650V7A12001400241130TO-262
    CS4N65ARR650V4A2400280014.5610TO-262

    5 part numbers share the same 650 / TO-262 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS10N65ARR-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CS10N65ARR-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS10N65ARR-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS10N65ARR-G need?

    Qg is 32 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS10N65ARR-G come in?

    TO-262. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 5 part numbers in this rating group?

    All 5 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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