CS10N70FA9D CR Micro 700V 10A N-Channel MOSFET TO-220F
CS10N70FA9D CR Micro 700V 10A N-Channel MOSFET TO-220F

CS10N70FA9D CR Micro 700V 10A N-Channel MOSFET TO-220F

Share
pCS10N70FA9D CR Micro 700V 10A N-Channel MOSFET TO-220F — Rds(on) 780 mΩ typ, Qg 39 nC./p
    • Product Details
    • Download
    At a Glance
    • 700 V / 10 A continuous drain current, TO-220F package
    • Rds(on) 780 mΩ typ, 900 mΩ max at VGS = 10 V
    • Qg 39 nC and Ciss 1553 pF
    • N-channel, Planar process

    The CR Micro CS10N70FA9D is a 700 V 10 A N-channel MOSFET in a TO-220F package, built on the Planar process. On-resistance is 780 mΩ typical and 900 mΩ maximum at a 10 V gate drive; gate charge is 39 nC with 1553 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)700 V
    Continuous Drain Current (ID)10 A
    Rds(on) @ VGS = 10 V, typ.780 mΩ
    Rds(on) @ VGS = 10 V, max.900 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)39 nC
    Input Capacitance (Ciss)1553 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-220F

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJF200N70G2700V20A175200421251TO-220F
    CRJF360N70G2700V12A33038026753TO-220F
    CRJF440N70G2700V10A39044020573TO-220F
    CRJF600N70G2M700V7A51060013432TO-220F
    CRJF600N70G2700V8A54060015472TO-220F
    CS16N70FA9R-G700V16A58065046.92725TO-220F
    CS12N70FA9R-G700V12A70085038.61981TO-220F
    CRJF900N70G2700V6A78090011325TO-220F
    CS10N70FA9D700V10A780900391553TO-220F
    CS10N70FA9R700V10A8801050341563TO-220F
    CS7N70FA9R-G700V7A960115026.51556TO-220F
    CS8N70FA9R-G700V8A9601150271556TO-220F
    CS6N70FA9R700V6A12801600261102TO-220F
    CS4N70FA9R700V4A2550300012.7606TO-220F

    14 part numbers share the same 700 / TO-220F / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS10N70FA9D an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 700 V.

    Can the CS10N70FA9D be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS10N70FA9D?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS10N70FA9D need?

    Qg is 39 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS10N70FA9D come in?

    TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 14 part numbers in this rating group?

    All 14 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products