CS12N80A8RDZ-G CR Micro 800V 12A N-Channel MOSFET TO-220
CS12N80A8RDZ-G CR Micro 800V 12A N-Channel MOSFET TO-220

CS12N80A8RDZ-G CR Micro 800V 12A N-Channel MOSFET TO-220

Share
pCS12N80A8RDZ-G CR Micro 800V 12A N-Channel MOSFET TO-220 — Rds(on) 750 mΩ typ, Qg 51.1 nC./p
    • Product Details
    • Download
    At a Glance
    • 800 V / 12 A continuous drain current, TO-220 package
    • Rds(on) 750 mΩ typ, 900 mΩ max at VGS = 10 V
    • Qg 51.1 nC and Ciss 2764 pF
    • N-channel, Planar process

    The CR Micro CS12N80A8RDZ-G is a 800 V 12 A N-channel MOSFET in a TO-220 package, built on the Planar process. On-resistance is 750 mΩ typical and 900 mΩ maximum at a 10 V gate drive; gate charge is 51.1 nC with 2764 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)800 V
    Continuous Drain Current (ID)12 A
    Rds(on) @ VGS = 10 V, typ.750 mΩ
    Rds(on) @ VGS = 10 V, max.900 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)51.1 nC
    Input Capacitance (Ciss)2764 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-220

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJT450N80G2800V10A35045025861TO-220
    CS10N80A8HD800V10A720900652900TO-220
    CS12N80A8RDZ-G800V12A75090051.12764TO-220
    CS7N80A8R800V7A1500180033.91443TO-220

    4 part numbers share the same 800 / TO-220 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    High-voltage offline supplies, active clamp topologies, and single-stage PFC.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS12N80A8RDZ-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 800 V.

    Can the CS12N80A8RDZ-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS12N80A8RDZ-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS12N80A8RDZ-G need?

    Qg is 51.1 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS12N80A8RDZ-G come in?

    TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 4 part numbers in this rating group?

    All 4 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products