CS18N20FA9RC-G CR Micro 200V 18A N-Channel MOSFET TO-220F
CS18N20FA9RC-G CR Micro 200V 18A N-Channel MOSFET TO-220F

CS18N20FA9RC-G CR Micro 200V 18A N-Channel MOSFET TO-220F

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pCS18N20FA9RC-G CR Micro 200V 18A N-Channel MOSFET TO-220F — Rds(on) 120 mΩ typ./p
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    At a Glance
    • 200 V / 18 A continuous drain current, TO-220F package
    • Rds(on) 120 mΩ typ, 180 mΩ max at VGS = 10 V
    • N-channel, Planar process

    The CR Micro CS18N20FA9RC-G is a 200 V 18 A N-channel MOSFET in a TO-220F package, built on the Planar process. On-resistance is 120 mΩ typical and 180 mΩ maximum at a 10 V gate drive; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)200 V
    Continuous Drain Current (ID)18 A
    Rds(on) @ VGS = 10 V, typ.120 mΩ
    Rds(on) @ VGS = 10 V, max.180 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-220F

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS50N20FA9R200V50A425149.42819TO-220F
    CS40N20FA9R-G200V40A5466362525TO-220F
    CS30N20FA9R-G200V30A7080381945TO-220F
    CS18N20FA9R200V18A12018020.41136TO-220F
    CS18N20FA9RC-G200V18A120180TO-220F
    CS630FA9R200V9A22028014.6673TO-220F
    CS9N20FA9R200V9A24028012.6560TO-220F

    7 part numbers share the same 200 / TO-220F / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS18N20FA9RC-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 200 V.

    Can the CS18N20FA9RC-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS18N20FA9RC-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    What package does the CS18N20FA9RC-G come in?

    TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 7 part numbers in this rating group?

    All 7 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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