CS20N90AKRZ-G CR Micro 900V 20A N-Channel MOSFET TO-247
CS20N90AKRZ-G CR Micro 900V 20A N-Channel MOSFET TO-247

CS20N90AKRZ-G CR Micro 900V 20A N-Channel MOSFET TO-247

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pCS20N90AKRZ-G CR Micro 900V 20A N-Channel MOSFET TO-247 — Rds(on) 280 mΩ typ, Qg 140.5 nC./p
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    At a Glance
    • 900 V / 20 A continuous drain current, TO-247 package
    • Rds(on) 280 mΩ typ, 400 mΩ max at VGS = 10 V
    • Qg 140.5 nC and Ciss 7904 pF
    • N-channel, Planar process

    The CR Micro CS20N90AKRZ-G is a 900 V 20 A N-channel MOSFET in a TO-247 package, built on the Planar process. On-resistance is 280 mΩ typical and 400 mΩ maximum at a 10 V gate drive; gate charge is 140.5 nC with 7904 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)900 V
    Continuous Drain Current (ID)20 A
    Rds(on) @ VGS = 10 V, typ.280 mΩ
    Rds(on) @ VGS = 10 V, max.400 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)140.5 nC
    Input Capacitance (Ciss)7904 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS20N90AKRZ-G900V20A280400140.57904TO-247
    CS13N90AKR-G900V13A570680835023TO-247
    CS9N90AKRD-G900V9A900110057.92716TO-247

    3 part numbers share the same 900 / TO-247 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    High-voltage offline supplies, active clamp topologies, and single-stage PFC.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS20N90AKRZ-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 900 V.

    Can the CS20N90AKRZ-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS20N90AKRZ-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS20N90AKRZ-G need?

    Qg is 140.5 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS20N90AKRZ-G come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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