CS25N06C3 CR Micro 60V 25A N-Channel MOSFET TO-251
CS25N06C3 CR Micro 60V 25A N-Channel MOSFET TO-251

CS25N06C3 CR Micro 60V 25A N-Channel MOSFET TO-251

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pCS25N06C3 CR Micro 60V 25A N-Channel MOSFET TO-251 — Rds(on) 23 mΩ typ, Qg 21.2 nC./p
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    At a Glance
    • 60 V / 25 A continuous drain current, TO-251 package
    • Rds(on) 23 mΩ typ, 29 mΩ max at VGS = 10 V
    • Qg 21.2 nC and Ciss 939 pF
    • N-channel, Trench process

    The CR Micro CS25N06C3 is a 60 V 25 A N-channel MOSFET in a TO-251 package, built on the Trench process. On-resistance is 23 mΩ typical and 29 mΩ maximum at a 10 V gate drive; 30 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 21.2 nC with 939 pF input capacitance; threshold voltage spans 1 to 2 V.

    Key Specifications

    Drain-Source Voltage (VDS)60 V
    Continuous Drain Current (ID)25 A
    Rds(on) @ VGS = 10 V, typ.23 mΩ
    Rds(on) @ VGS = 10 V, max.29 mΩ
    Rds(on) @ VGS = 4.5 V, typ.30 mΩ
    Rds(on) @ VGS = 4.5 V, max.38 mΩ
    Gate Threshold Voltage (VGS(th))1 – 2 V
    Total Gate Charge (Qg)21.2 nC
    Input Capacitance (Ciss)939 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageTO-251

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRTH105N06L60V63A8.510.5451940TO-251
    CS55N06A360V55A101350.72370TO-251
    CS25N06C360V25A232921.2939TO-251

    3 part numbers share the same 60 / TO-251 / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS25N06C3 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 60 V.

    Can the CS25N06C3 be driven from a 4.5 V logic-level gate signal?

    Yes. The datasheet characterises Rds(on) at 4.5 V: 30 mΩ typical and 38 mΩ maximum.

    What is the gate threshold voltage of the CS25N06C3?

    VGS(th) is specified between 1 and 2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS25N06C3 need?

    Qg is 21.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS25N06C3 come in?

    TO-251. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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