CS25N06C4 CR Micro 60V 25A N-Channel MOSFET TO-252 or DPAK
CS25N06C4 CR Micro 60V 25A N-Channel MOSFET TO-252 or DPAK

CS25N06C4 CR Micro 60V 25A N-Channel MOSFET TO-252 or DPAK

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pCS25N06C4 CR Micro 60V 25A N-Channel MOSFET TO-252 or DPAK — Rds(on) 23 mΩ typ, Qg 21.2 nC./p
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    At a Glance
    • 60 V / 25 A continuous drain current, TO-252 or DPAK package
    • Rds(on) 23 mΩ typ, 29 mΩ max at VGS = 10 V
    • Qg 21.2 nC and Ciss 939 pF
    • N-channel, Trench process

    The CR Micro CS25N06C4 is a 60 V 25 A N-channel MOSFET in a TO-252 or DPAK package, built on the Trench process. On-resistance is 23 mΩ typical and 29 mΩ maximum at a 10 V gate drive; 30 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 21.2 nC with 939 pF input capacitance; threshold voltage spans 1 to 2 V.

    Key Specifications

    Drain-Source Voltage (VDS)60 V
    Continuous Drain Current (ID)25 A
    Rds(on) @ VGS = 10 V, typ.23 mΩ
    Rds(on) @ VGS = 10 V, max.29 mΩ
    Rds(on) @ VGS = 4.5 V, typ.30 mΩ
    Rds(on) @ VGS = 4.5 V, max.38 mΩ
    Gate Threshold Voltage (VGS(th))1 – 2 V
    Total Gate Charge (Qg)21.2 nC
    Input Capacitance (Ciss)939 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageTO-252 or DPAK

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRSD037N06N4Z60V80A2.93.7483.32TO-252 or DPAK
    CS100N06D460V100A6.51088.84398TO-252 or DPAK
    CRTD105N06L60V64A8.510.5461940TO-252 or DPAK
    CRSD110N06L2Q60V60A1012.5181016TO-252 or DPAK
    CS55N06A460V55A101350.72370TO-252 or DPAK
    CS45N06A460V45A121643.51876TO-252 or DPAK
    CS25N06C460V25A232921.2939TO-252 or DPAK

    7 part numbers share the same 60 / TO-252 or DPAK / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS25N06C4 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 60 V.

    Can the CS25N06C4 be driven from a 4.5 V logic-level gate signal?

    Yes. The datasheet characterises Rds(on) at 4.5 V: 30 mΩ typical and 38 mΩ maximum.

    What is the gate threshold voltage of the CS25N06C4?

    VGS(th) is specified between 1 and 2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS25N06C4 need?

    Qg is 21.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS25N06C4 come in?

    TO-252 or DPAK. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 7 part numbers in this rating group?

    All 7 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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