CS3N120AHR CR Micro 1200V 3A N-Channel MOSFET TO-3PH
CS3N120AHR CR Micro 1200V 3A N-Channel MOSFET TO-3PH

CS3N120AHR CR Micro 1200V 3A N-Channel MOSFET TO-3PH

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pCS3N120AHR CR Micro 1200V 3A N-Channel MOSFET TO-3PH — Rds(on) 5100 mΩ typ, Qg 19.7 nC./p
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    At a Glance
    • 1200 V / 3 A continuous drain current, TO-3PH package
    • Rds(on) 5100 mΩ typ, 6000 mΩ max at VGS = 10 V
    • Qg 19.7 nC and Ciss 1006 pF
    • N-channel, Planar process

    The CR Micro CS3N120AHR is a 1200 V 3 A N-channel MOSFET in a TO-3PH package, built on the Planar process. On-resistance is 5100 mΩ typical and 6000 mΩ maximum at a 10 V gate drive; gate charge is 19.7 nC with 1006 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)1200 V
    Continuous Drain Current (ID)3 A
    Rds(on) @ VGS = 10 V, typ.5100 mΩ
    Rds(on) @ VGS = 10 V, max.6000 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)19.7 nC
    Input Capacitance (Ciss)1006 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-3PH

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS6N120AHR-G1200V6A23002900452333TO-3PH
    CS3N120AHR1200V3A5100600019.71006TO-3PH

    2 part numbers share the same 1200 / TO-3PH / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Solar inverters, three-phase motor drives, UPS, and railway auxiliary converters.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS3N120AHR an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 1200 V.

    Can the CS3N120AHR be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS3N120AHR?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS3N120AHR need?

    Qg is 19.7 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS3N120AHR come in?

    TO-3PH. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 2 part numbers in this rating group?

    All 2 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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