CS3N20A3H CR Micro 200V 3A N-Channel MOSFET TO-251
CS3N20A3H CR Micro 200V 3A N-Channel MOSFET TO-251

CS3N20A3H CR Micro 200V 3A N-Channel MOSFET TO-251

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pCS3N20A3H CR Micro 200V 3A N-Channel MOSFET TO-251 — Rds(on) 1200 mΩ typ, Qg 4.3 nC./p
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    At a Glance
    • 200 V / 3 A continuous drain current, TO-251 package
    • Rds(on) 1200 mΩ typ, 1500 mΩ max at VGS = 10 V
    • Qg 4.3 nC and Ciss 101 pF
    • N-channel, Planar process

    The CR Micro CS3N20A3H is a 200 V 3 A N-channel MOSFET in a TO-251 package, built on the Planar process. On-resistance is 1200 mΩ typical and 1500 mΩ maximum at a 10 V gate drive; gate charge is 4.3 nC with 101 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)200 V
    Continuous Drain Current (ID)3 A
    Rds(on) @ VGS = 10 V, typ.1200 mΩ
    Rds(on) @ VGS = 10 V, max.1500 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)4.3 nC
    Input Capacitance (Ciss)101 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-251

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS18N20A3R200V18A12018020.41136TO-251
    CS630A3R200V9A22028014.6673TO-251
    CS9N20A3R200V9A24028012.6560TO-251
    CS3N20A3H200V3A120015004.3101TO-251

    4 part numbers share the same 200 / TO-251 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS3N20A3H an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 200 V.

    Can the CS3N20A3H be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS3N20A3H?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS3N20A3H need?

    Qg is 4.3 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS3N20A3H come in?

    TO-251. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 4 part numbers in this rating group?

    All 4 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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