CS3N80A4RZ-G CR Micro 800V 3A N-Channel MOSFET TO-252
CS3N80A4RZ-G CR Micro 800V 3A N-Channel MOSFET TO-252

CS3N80A4RZ-G CR Micro 800V 3A N-Channel MOSFET TO-252

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pCS3N80A4RZ-G CR Micro 800V 3A N-Channel MOSFET TO-252 — Rds(on) 3700 mΩ typ, Qg 17.3 nC./p
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    At a Glance
    • 800 V / 3 A continuous drain current, TO-252 package
    • Rds(on) 3700 mΩ typ, 4800 mΩ max at VGS = 10 V
    • Qg 17.3 nC and Ciss 567 pF
    • N-channel, Planar process

    The CR Micro CS3N80A4RZ-G is a 800 V 3 A N-channel MOSFET in a TO-252 package, built on the Planar process. On-resistance is 3700 mΩ typical and 4800 mΩ maximum at a 10 V gate drive; gate charge is 17.3 nC with 567 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)800 V
    Continuous Drain Current (ID)3 A
    Rds(on) @ VGS = 10 V, typ.3700 mΩ
    Rds(on) @ VGS = 10 V, max.4800 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)17.3 nC
    Input Capacitance (Ciss)567 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-252

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJD450N80G2800V10A35045025861TO-252
    CRJD600N80G2E800V8A490600TO-252
    CRJD750N80G2E800V7A650750TO-252
    CRJD900N80G2E800V6A700900TO-252
    CRJD1K4N80G2E800V4A11001400TO-252
    CS6N80A4R-G800V6A1800220028.41556TO-252
    CS4N80A4HD800V4A2200280025865TO-252
    CS4N80A4R-G800V4A3300380020698TO-252
    CS3N80A4R800V3A3700480017.3567TO-252
    CS3N80A4RZ-G800V3A3700480017.3567TO-252
    CS2N80A4R800V2A94001050010.9261TO-252

    11 part numbers share the same 800 / TO-252 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    High-voltage offline supplies, active clamp topologies, and single-stage PFC.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS3N80A4RZ-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 800 V.

    Can the CS3N80A4RZ-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS3N80A4RZ-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS3N80A4RZ-G need?

    Qg is 17.3 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS3N80A4RZ-G come in?

    TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 11 part numbers in this rating group?

    All 11 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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