CS4N70A4D-G CR Micro 700V 4A N-Channel MOSFET TO-252
CS4N70A4D-G CR Micro 700V 4A N-Channel MOSFET TO-252

CS4N70A4D-G CR Micro 700V 4A N-Channel MOSFET TO-252

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pCS4N70A4D-G CR Micro 700V 4A N-Channel MOSFET TO-252 — Rds(on) 2500 mΩ typ, Qg 15 nC./p
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    At a Glance
    • 700 V / 4 A continuous drain current, TO-252 package
    • Rds(on) 2500 mΩ typ, 2800 mΩ max at VGS = 10 V
    • Qg 15 nC and Ciss 500 pF
    • N-channel, Planar process

    The CR Micro CS4N70A4D-G is a 700 V 4 A N-channel MOSFET in a TO-252 package, built on the Planar process. On-resistance is 2500 mΩ typical and 2800 mΩ maximum at a 10 V gate drive; gate charge is 15 nC with 500 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)700 V
    Continuous Drain Current (ID)4 A
    Rds(on) @ VGS = 10 V, typ.2500 mΩ
    Rds(on) @ VGS = 10 V, max.2800 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)15 nC
    Input Capacitance (Ciss)500 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-252

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJD360N70G2700V12A33038026753TO-252
    CRJD440N70G2700V10A39044020573TO-252
    CRJD600N70G2M700V7A51060013432TO-252
    CRJD600N70G2700V8A54060015472TO-252
    CRJD900N70G2700V6A78090011325TO-252
    CS7N70A4R-G700V7A960115026.51556TO-252
    CRJD1K4N70G2E700V4A1150140010.2247TO-252
    CS6N70A4R-G700V6A12801600261102TO-252
    CS4N70A4D-G700V4A2500280015500TO-252
    CS4N70A4R700V4A2550300012.7606TO-252

    10 part numbers share the same 700 / TO-252 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS4N70A4D-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 700 V.

    Can the CS4N70A4D-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS4N70A4D-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS4N70A4D-G need?

    Qg is 15 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS4N70A4D-G come in?

    TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 10 part numbers in this rating group?

    All 10 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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