CS5N06AE-1 CR Micro 60V 5A N-Channel MOSFET SOP-8
CS5N06AE-1 CR Micro 60V 5A N-Channel MOSFET SOP-8

CS5N06AE-1 CR Micro 60V 5A N-Channel MOSFET SOP-8

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pCS5N06AE-1 CR Micro 60V 5A N-Channel MOSFET SOP-8 — Rds(on) 36 mΩ typ, Qg 11.2 nC./p
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    At a Glance
    • 60 V / 5 A continuous drain current, SOP-8 package
    • Rds(on) 36 mΩ typ, 45 mΩ max at VGS = 10 V
    • Qg 11.2 nC and Ciss 504 pF
    • N-channel, Trench process

    The CR Micro CS5N06AE-1 is a 60 V 5 A N-channel MOSFET in a SOP-8 package, built on the Trench process. On-resistance is 36 mΩ typical and 45 mΩ maximum at a 10 V gate drive; 53 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 11.2 nC with 504 pF input capacitance; threshold voltage spans 1.7 to 2.8 V.

    Key Specifications

    Drain-Source Voltage (VDS)60 V
    Continuous Drain Current (ID)5 A
    Rds(on) @ VGS = 10 V, typ.36 mΩ
    Rds(on) @ VGS = 10 V, max.45 mΩ
    Rds(on) @ VGS = 4.5 V, typ.53 mΩ
    Rds(on) @ VGS = 4.5 V, max.66 mΩ
    Gate Threshold Voltage (VGS(th))1.7 – 2.8 V
    Total Gate Charge (Qg)11.2 nC
    Input Capacitance (Ciss)504 pF
    Channel PolarityN-channel
    Process FamilyTrench
    PackageSOP-8

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRSE095N06L260V12A89.6181062SOP-8
    CRSE095N06L2A60V12A89.6181062SOP-8
    CS5N06AE-160V5A364511.2504SOP-8

    3 part numbers share the same 60 / SOP-8 / N rating — sorted by rds(on) typ.

    Process Technology

    Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.

    Applications

    Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS5N06AE-1 an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 60 V.

    Can the CS5N06AE-1 be driven from a 4.5 V logic-level gate signal?

    Yes. The datasheet characterises Rds(on) at 4.5 V: 53 mΩ typical and 66 mΩ maximum.

    What is the gate threshold voltage of the CS5N06AE-1?

    VGS(th) is specified between 1.7 and 2.8 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS5N06AE-1 need?

    Qg is 11.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS5N06AE-1 come in?

    SOP-8. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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