CS5N10AQ2-G-1 CR Micro 100V 5A N-Channel MOSFET DFN3x3D
- Product Details
- Download
- 100 V / 5 A continuous drain current, DFN3x3D package
- Rds(on) 170 mΩ typ, 220 mΩ max at VGS = 10 V
- Qg 9.4 nC and Ciss 392 pF
- N-channel, Trench process
The CR Micro CS5N10AQ2-G-1 is a 100 V 5 A N-channel MOSFET in a DFN3x3D package, built on the Trench process. On-resistance is 170 mΩ typical and 220 mΩ maximum at a 10 V gate drive; 200 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 9.4 nC with 392 pF input capacitance; threshold voltage spans 1.2 to 2.4 V.
Key Specifications
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 5 A |
| Rds(on) @ VGS = 10 V, typ. | 170 mΩ |
| Rds(on) @ VGS = 10 V, max. | 220 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 200 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 250 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.2 – 2.4 V |
| Total Gate Charge (Qg) | 9.4 nC |
| Input Capacitance (Ciss) | 392 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | DFN3x3D |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Synchronous rectification in 12–48 V rails, point-of-load converters, and hot-swap circuits.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS5N10AQ2-G-1 an N-channel or P-channel device?
It is N-channel. The drain-source rating is 100 V.
Can the CS5N10AQ2-G-1 be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 200 mΩ typical and 250 mΩ maximum.
What is the gate threshold voltage of the CS5N10AQ2-G-1?
VGS(th) is specified between 1.2 and 2.4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS5N10AQ2-G-1 need?
Qg is 9.4 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS5N10AQ2-G-1 come in?
DFN3x3D. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
Shenzhen Gaorunxin Technology Co., Ltd
Online message
Shenzhen Gaorunxin Technology Co., Ltd
